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NTR5105PT1G
+StücklisteMOSFET P-CH 60V 196MA SOT23-3
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HerstellerOnsemi
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Herstellerteil #NTR5105PT1G
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Paket SOT-23-3
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Auf Lager1941
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 196mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5Ohm @ 100mA, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 1 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 30.3 pF @ 25 V |
| Power Dissipation (Max) | 347mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
The NTR5105PT1G is a part of ON Semiconductor's portfolio, categorized as a low voltage transistor. It is commonly used in applications requiring efficient switching and amplification. This component is a PNP bipolar junction transistor (BJT) designed for surface-mount technology, making it ideal for compact electronic circuits and devices.
Key features of the NTR5105PT1G include its low VCE(sat) voltage, which ensures minimal power loss during operation, and a high current gain, allowing it to amplify current effectively. The transistor is designed to handle a maximum collector current of around 1 A and a collector-emitter voltage of up to 50 V, offering robust performance for various low-power applications.
Its compact SOT-23 package enhances its suitability for high-density circuit boards, making it a popular choice for consumer electronics, automotive, and industrial applications. The NTR5105PT1G is valued for its reliability and efficiency, aligning well with energy-conscious designs. Always consult the datasheet for specific specifications and applications to ensure optimal use.
Key features of the NTR5105PT1G include its low VCE(sat) voltage, which ensures minimal power loss during operation, and a high current gain, allowing it to amplify current effectively. The transistor is designed to handle a maximum collector current of around 1 A and a collector-emitter voltage of up to 50 V, offering robust performance for various low-power applications.
Its compact SOT-23 package enhances its suitability for high-density circuit boards, making it a popular choice for consumer electronics, automotive, and industrial applications. The NTR5105PT1G is valued for its reliability and efficiency, aligning well with energy-conscious designs. Always consult the datasheet for specific specifications and applications to ensure optimal use.
Equivalent
The NTR5105PT1G is an N-channel MOSFET. Equivalent products include:
1. IRLML2502 (International Rectifier / Infineon)
2. BSS123 (NXP / Vishay)
3. 2N7002 (ON Semiconductor / NXP / Vishay)
4. Si2312 (Vishay)
5. DMN10H120SFG (Diodes Incorporated)
These equivalents may vary slightly in specifications like current, voltage, and package format, so it is important to check the datasheets to ensure compatibility with your application.
1. IRLML2502 (International Rectifier / Infineon)
2. BSS123 (NXP / Vishay)
3. 2N7002 (ON Semiconductor / NXP / Vishay)
4. Si2312 (Vishay)
5. DMN10H120SFG (Diodes Incorporated)
These equivalents may vary slightly in specifications like current, voltage, and package format, so it is important to check the datasheets to ensure compatibility with your application.
Features
The NTR5105PT1G is a single N-channel MOSFET transistor characterized by a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of 0.55A. It features a low on-resistance (R_DS(on)) of 0.22 ohms at V_GS of 4.5V, which enhances efficiency by reducing power loss. This MOSFET is designed for low-level digital signal interfacing with its gate threshold voltage ranging from 0.8V to 2.0V. Its small SOT-23 package makes it suitable for compact circuits, enabling space-saving designs in applications like power management, load switches, and DC-DC converters. The device supports high-speed switching, contributing to efficient performance in various electronic devices. Additionally, it features built-in ESD protection, which enhances its reliability and durability in harsh operating environments. The NTR5105PT1G is RoHS compliant, ensuring it meets environmental safety standards.
Pinout
The NTR5105PT1G is a dual N-channel MOSFET from ON Semiconductor. It is designed for general-purpose switching applications. This MOSFET comes in a SOT-23 package, which typically has a 3-pin configuration. The pin functions are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET when it is turned on.
3. Source (S): This terminal is the output of the current flow from the drain through the MOSFET.
This configuration is common for MOSFETs in SOT-23 packages and provides efficient switching performance with low on-resistance. The NTR5105PT1G is suitable for applications in battery-powered devices, load switches, and various low-power applications.
1. Gate (G): This pin is used to control the operation of the MOSFET. By applying voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET when it is turned on.
3. Source (S): This terminal is the output of the current flow from the drain through the MOSFET.
This configuration is common for MOSFETs in SOT-23 packages and provides efficient switching performance with low on-resistance. The NTR5105PT1G is suitable for applications in battery-powered devices, load switches, and various low-power applications.
Manufacturer
The NTR5105PT1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions. The company focuses on enabling energy-efficient electronics with a broad portfolio that includes power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. These technologies are employed in a variety of sectors such as automotive, industrial, cloud power, and IoT. onsemi is recognized for its commitment to innovation, efficiency, and sustainability in electronic solutions.
Application
The NTR5105PT1G is a P-channel MOSFET commonly used in various applications due to its efficient switching capabilities. Key application areas include power management systems, load switching, and DC-DC converters. It is frequently used in battery-operated devices, such as smartphones and tablets, where low power consumption is crucial. Additionally, its compact size and thermal efficiency make it suitable for use in portable electronics and automotive applications, where space and heat dissipation are critical considerations. The MOSFET's reliability and performance also make it an ideal choice for LED drivers, industrial automation systems, and other consumer electronics requiring efficient power control and regulation.
Package
The NTR5105PT1G is a MOSFET device typically available in a SOT-23 package type. The SOT-23 is a small, surface-mount package commonly used for transistors and other semiconductor devices, offering a compact footprint suitable for space-constrained applications.
