Abbildungen dienen nur als Referenz
NTTFS5826NLTAG
+StücklisteMOSFET N-CH 60V 8A 8WDFN
-
HerstellerOnsemi
-
Herstellerteil #NTTFS5826NLTAG
-
Paket WDFN-8
-
Auf Lager4982
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 7.5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 25 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 850 pF @ 25 V |
| Power Dissipation (Max) | 3.1W (Ta), 19W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
Übersicht
Description
Key features of the NTTFS5826NLTAG include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of up to 15A, and a low on-resistance (R_DS(on)) of approximately 6.3 mΩ at a gate-source voltage (V_GS) of 10V. These specifications make it suitable for applications such as DC-DC converters, load switches, and other power management solutions.
The MOSFET is packaged in a compact, surface-mount DPAK (TO-252) package, allowing for efficient thermal management and easy integration into circuit designs. Its robust performance, combined with its small size, makes it ideal for use in consumer electronics, automotive systems, and industrial applications.
Equivalent
1. Vishay Siliconix SiR424DP
2. Infineon BSC026N08NS5
3. Fairchild FDB047N10
4. Alpha & Omega AO4262
It's important to compare key parameters like voltage, current ratings, RDS(on), and package type to ensure compatibility in your specific application. Always consult the datasheets for detailed specifications and perform tests in your design.
Features
1. N-Channel MOSFET: It is an N-channel enhancement mode field-effect transistor.
2. Low On-Resistance: Offers low on-resistance, which enhances efficiency and reduces power loss.
3. Fast Switching Speed: Designed for high-speed switching, suitable for various high-frequency applications.
4. High Current Capability: Can handle significant current loads, making it ideal for power management.
5. Thermal Efficiency: Generally built to dissipate heat effectively, ensuring stable operation under high power conditions.
6. Compact Package: Comes in a small package, saving space on circuit boards.
7. Rugged Design: Engineered to handle high levels of stress, including voltage and current surges.
These features make the NTTFS5826NLTAG suitable for use in power supply circuits, DC-DC converters, and other applications requiring efficient power control and conversion.
Pinout
The primary function of the NTTFS5826NLTAG is to act as a switch for controlling power delivery in electronic circuits. It provides efficient power management by allowing high-speed switching and low on-resistance, which minimizes power loss and improves overall efficiency. This MOSFET is suitable for use in power management systems, DC-DC converters, and other applications where efficient switching is required.
For specific pin configuration and detailed electrical characteristics, it is essential to refer to the manufacturer's datasheet. The datasheet will provide precise information on pin assignments, electrical specifications, and application guidelines.
Manufacturer
Application
1. Power Management: Ideal for DC-DC converters and voltage regulation in portable devices.
2. Automotive Systems: Utilized for controlling power in electronic control units (ECUs) and relay drivers.
3. Consumer Electronics: Used in power supply circuits for gadgets like laptops, TVs, and gaming consoles.
4. Industrial Equipment: Employed in motor drives and inverters for managing high currents.
5. Telecommunications: Applied in power supply units for network equipment.
Its low on-resistance and high-speed switching capabilities make it suitable for applications requiring efficient power handling.