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NVB082N65S3F
+StücklisteMOSFET N-CH 650V 40A D2PAK-3
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HerstellerOnsemi
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Herstellerteil #NVB082N65S3F
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Paket D2PAK-3
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Auf Lager3307
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, SuperFET® III, FRFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 82mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3410 pF @ 400 V |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK-3 (TO-263-3) |
Übersicht
Description
This component is typically used in power conversion, motor control, and power supply applications. Its advanced design incorporates SuperFET III technology, offering improved efficiency over previous generations of MOSFETs. The NVB082N65S3F is encapsulated in a TO-247 package, providing excellent thermal performance and ease of mounting for heat dissipation. It is also designed to handle high-speed operations, making it suitable for switching power supplies and other applications requiring efficient energy management. Overall, the NVB082N65S3F is sought after for its robust performance in demanding environments.
Equivalent
1. Infineon IPA65R650C6
2. STMicroelectronics STP65NF06
3. Vishay SiHP065N65E
4. Toshiba TK20A60W
5. NXP PSMN065-100YSE
These alternatives offer similar voltage ratings and performance characteristics, but always verify the datasheet specifications for compatibility in your specific application.
Features
1. Voltage Rating: It typically supports a high drain-source voltage, often around 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current, often in the range of 80A, which is ideal for power-intensive applications.
3. RDS(on): It offers low on-resistance (RDS(on)), which reduces power loss and improves efficiency.
4. Fast Switching: This MOSFET is designed for rapid switching speeds, which helps in reducing switching losses in circuits.
5. Thermal Performance: It is equipped with good thermal performance features to maintain efficiency and reliability under high-power operations.
6. Package Type: Typically available in standard power MOSFET package types that facilitate easy integration into circuit designs.
These features make the NVB082N65S3F suitable for applications like power supplies, motor drives, and other high-power electronic systems.
Pinout
1. Gate (G): This pin is used to control the on/off state of the MOSFET. By applying a voltage to the gate, you can switch the device from a non-conducting to a conducting state.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the conducting state. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. When the MOSFET is conducting, current flows from the drain to the source.
This MOSFET is used in various applications, including power supplies, motor drives, and other systems where efficient power management is crucial. The exact number of pins and the package type should be confirmed with the datasheet for precise application details.