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NVF3055L108T1G
+StücklisteMOSFET N-CH 60V 3A SOT223
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HerstellerOnsemi
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Herstellerteil #NVF3055L108T1G
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Paket SOT-223
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Auf Lager5566
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 1.5A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 5 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 440 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
Übersicht
Description
The NVF3055L108T1G is a specific model of N-channel Power MOSFET. It is designed for use in electronic circuits where efficient switching and amplification of electronic signals are required. Key features of this component include a low on-state resistance, which enhances performance by minimizing energy loss during operation. It is typically utilized in applications such as power management, motor control, and DC-DC converters due to its ability to handle high power levels and fast switching speeds.
The MOSFET is housed in a surface-mount package, making it suitable for compact electronic designs. It is often characterized by its maximum drain-source voltage, continuous drain current, and gate threshold voltage, which are crucial for determining suitability in various circuits. Additionally, it is designed to withstand significant levels of power dissipation, which is crucial for maintaining stability and longevity in demanding applications.
Overall, the NVF3055L108T1G is a versatile and robust component used widely in the field of power electronics to enhance efficiency and performance.
The MOSFET is housed in a surface-mount package, making it suitable for compact electronic designs. It is often characterized by its maximum drain-source voltage, continuous drain current, and gate threshold voltage, which are crucial for determining suitability in various circuits. Additionally, it is designed to withstand significant levels of power dissipation, which is crucial for maintaining stability and longevity in demanding applications.
Overall, the NVF3055L108T1G is a versatile and robust component used widely in the field of power electronics to enhance efficiency and performance.
Equivalent
The NVF3055L108T1G is an N-channel MOSFET. Equivalent products would include other N-channel MOSFETs with similar voltage, current ratings, and package types like the IRFZ44N, IRLI3705N, or NTD3055-150M. Always check the datasheets to ensure compatibility of electrical characteristics and package dimensions.
Features
The NVF3055L108T1G is an N-channel MOSFET commonly used in various electronic applications. Key features include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 13A at 25°C.
2. Low On-State Resistance: The MOSFET offers a low R_DS(on), which is crucial for efficient power management and reduced heat generation.
3. Package Type: It is available in a compact SOT-223 package, making it suitable for space-constrained designs.
4. Applications: Ideal for use in power management, load switching, and low voltage drives.
5. Thermal Performance: This MOSFET is designed to offer efficient thermal performance, supporting high power applications.
6. Enhancement Mode: Operates as an enhancement-mode transistor, meaning it requires a positive gate-source voltage to conduct.
Overall, the NVF3055L108T1G is valued for its efficiency, thermal performance, and suitability in a range of electronic applications.
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 13A at 25°C.
2. Low On-State Resistance: The MOSFET offers a low R_DS(on), which is crucial for efficient power management and reduced heat generation.
3. Package Type: It is available in a compact SOT-223 package, making it suitable for space-constrained designs.
4. Applications: Ideal for use in power management, load switching, and low voltage drives.
5. Thermal Performance: This MOSFET is designed to offer efficient thermal performance, supporting high power applications.
6. Enhancement Mode: Operates as an enhancement-mode transistor, meaning it requires a positive gate-source voltage to conduct.
Overall, the NVF3055L108T1G is valued for its efficiency, thermal performance, and suitability in a range of electronic applications.
Pinout
The NVF3055L108T1G is an N-channel MOSFET transistor. It typically comes in a surface-mount package, such as the DPAK (TO-252), and generally has three main pins. The pins and their functions are:
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET from the positive side of the circuit.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET to the negative side of the circuit, completing the circuit.
Additionally, there is a metal tab or pad that is often connected to the drain, providing both electrical and thermal connections. The NVF3055L108T1G is used in various applications for switching and amplifying electronic signals.
1. Gate (G): This pin is used to control the MOSFET. When a voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET from the positive side of the circuit.
3. Source (S): This pin is the terminal through which the main current exits the MOSFET to the negative side of the circuit, completing the circuit.
Additionally, there is a metal tab or pad that is often connected to the drain, providing both electrical and thermal connections. The NVF3055L108T1G is used in various applications for switching and amplifying electronic signals.
Manufacturer
The NVF3055L108T1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is an American company specializing in semiconductor manufacturing. The company provides a variety of products, including power and signal management, logic, discrete, and custom devices for a wide range of applications. These applications are mainly in the automotive, industrial, cloud power, and Internet of Things (IoT) sectors.
onsemi focuses on energy-efficient innovations and advanced technology solutions that help improve energy efficiency and semiconductor design. Their product portfolio is extensive, catering to various markets with a strong emphasis on sustainability and performance.
onsemi focuses on energy-efficient innovations and advanced technology solutions that help improve energy efficiency and semiconductor design. Their product portfolio is extensive, catering to various markets with a strong emphasis on sustainability and performance.
Application
The NVF3055L108T1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Its primary application areas include power management systems, DC-DC converters, and motor control circuits. It is also utilized in switching applications, such as in power supplies, due to its efficiency in handling large currents and low on-state resistance. Additionally, it is used in automotive electronics for managing battery power and in industrial systems for controlling loads and enhancing energy efficiency. Its versatility and reliability make it suitable for a wide range of electronic devices.
Package
The NVF3055L108T1G is housed in a Surface-Mount Device (SMD) package, specifically an SOT-223.
