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NVMFS5C426NAFT1G
+StücklisteMOSFET N-CH 40V 41A/235A 5DFN
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HerstellerOnsemi
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Herstellerteil #NVMFS5C426NAFT1G
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Paket SO-8FL
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Auf Lager2225
365 Tage Qualitätsgarantie
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90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 41A (Ta), 235A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.3mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 3.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4300 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 128W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key features of the NVMFS5C426NAFT1G include low on-resistance, which ensures efficient power delivery and minimal energy loss. It also offers high-speed switching capability, contributing to the improved performance of electronic circuits. The device comes in a compact, surface-mount package, making it suitable for high-density circuit boards where space is at a premium.
Additionally, this MOSFET is designed to withstand high temperatures and challenging environments, adhering to automotive industry standards for reliability and durability. It is also typically equipped with ESD (Electrostatic Discharge) protection, enhancing its robustness against voltage spikes. Overall, the NVMFS5C426NAFT1G is ideal for applications requiring efficient power management and robust performance in automotive and industrial sectors.
Equivalent
Features
1. Technology: Utilizes TrenchFET technology, which provides enhanced switching performance and efficiency.
2. Voltage and Current Ratings: Typically supports a drain-source voltage (Vds) of around 30V and can handle a continuous drain current (Id) of up to approximately 60A, although specific values can vary slightly.
3. Rds(on): It offers a low on-state resistance (Rds(on)), which minimizes power loss and heat generation during operation, improving overall efficiency.
4. Package: Comes in a surface-mount package, often in a SO-8FL format, facilitating easy integration into circuit boards.
5. Applications: Commonly used in applications like DC-DC converters, power management, automotive electronics, and other systems requiring efficient voltage regulation and load switching.
6. Thermal Performance: Designed for good thermal management, allowing for reliable operation under high power and current conditions.
These features make it suitable for a variety of high-efficiency and high-power applications.
Pinout
Regarding its pin count and function:
- Pin Count: The NVMFS5C426NAFT1G typically comes in a Power 56 package, which generally includes three main pins or terminals: Drain (D), Gate (G), and Source (S). Additionally, there can be a thermal pad which is sometimes considered a fourth terminal for heat dissipation purposes.
- Function: The primary function of this N-channel MOSFET is to control the flow of current between the drain and source terminals, regulated by the voltage applied to the gate terminal. It is commonly used for switching and amplification purposes in power management applications due to its efficient handling of high currents and voltages.
For detailed specifications and electrical characteristics, referring to the device's datasheet is recommended.
Manufacturer
Application
1. Automotive Electronics: Used in power management, motor control, and battery protection systems.
2. Industrial Automation: Applied in motor drives, power supplies, and inverters.
3. Consumer Electronics: Utilized in power conversion and management for various devices.
4. Telecommunications: Supports power regulation in network equipment.
5. Renewable Energy Systems: Involved in controlling and converting power in solar inverters and wind turbines.
These applications benefit from the MOSFET's low on-resistance and high efficiency.