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NVMFS6H836NLT1G
+StücklisteMOSFET N-CH 80V 16A/77A 5DFN
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HerstellerOnsemi
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Herstellerteil #NVMFS6H836NLT1G
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Auf Lager17436
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Ta), 77A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6.2mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 95µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1950 pF @ 40 V |
| Power Dissipation (Max) | 3.7W (Ta), 89W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
The NVMFS6H836NLT1G is a power MOSFET designed by ON Semiconductor. It is part of the company's Power MOSFET series, which is intended for efficient power management applications. This particular device is a single N-channel MOSFET, meaning it uses an N-type channel for electrical conduction. It features a low on-resistance, which reduces power loss and increases efficiency in switching applications.
Key specifications of the NVMFS6H836NLT1G include a drain-source voltage (V_DS) rating of 60V and a continuous drain current (I_D) of up to 80A, allowing it to handle substantial power loads. It typically comes in a compact SO-8FL (Dual Flat No-Lead) package, enhancing thermal performance and saving space on circuit boards.
The device is commonly used in various applications, such as DC-DC converters, load switches, and motor drives, where high efficiency and compact design are important. Its robust design and reliable performance make it suitable for both consumer electronics and industrial applications.
Key specifications of the NVMFS6H836NLT1G include a drain-source voltage (V_DS) rating of 60V and a continuous drain current (I_D) of up to 80A, allowing it to handle substantial power loads. It typically comes in a compact SO-8FL (Dual Flat No-Lead) package, enhancing thermal performance and saving space on circuit boards.
The device is commonly used in various applications, such as DC-DC converters, load switches, and motor drives, where high efficiency and compact design are important. Its robust design and reliable performance make it suitable for both consumer electronics and industrial applications.
Equivalent
The NVMFS6H836NLT1G is a power MOSFET from ON Semiconductor. Equivalent products can include similar MOSFETs like the IRF540N from Infineon, the FQP30N06L from ON Semiconductor, and the STP30N60DM2 from STMicroelectronics. However, compatibility depends on specific circuit requirements such as voltage, current ratings, and package type, so checking datasheets for exact specifications is essential.
Features
The NVMFS6H836NLT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used for switching applications. Here are its key features:
1. Technology: Utilizes advanced planar stripe and DMOS technology for high cell density, enhancing efficiency and performance.
2. Voltage/Current Ratings: Features a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) suitable for power applications.
3. R_DS(on): Offers low on-state resistance, improving power efficiency by minimizing energy loss during operation.
4. Package Type: Available in a compact, surface-mount package for ease of integration into various electronic designs.
5. Thermal Performance: Designed for optimal thermal performance, allowing for effective heat dissipation in high-power applications.
6. ESD Protection: Includes electrostatic discharge (ESD) protection, enhancing reliability and durability.
7. Applications: Suitable for use in DC-DC converters, power management systems, load switches, and other applications requiring efficient switching and power handling.
These features make the NVMFS6H836NLT1G a reliable choice for designers focusing on power efficiency and compactness.
1. Technology: Utilizes advanced planar stripe and DMOS technology for high cell density, enhancing efficiency and performance.
2. Voltage/Current Ratings: Features a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) suitable for power applications.
3. R_DS(on): Offers low on-state resistance, improving power efficiency by minimizing energy loss during operation.
4. Package Type: Available in a compact, surface-mount package for ease of integration into various electronic designs.
5. Thermal Performance: Designed for optimal thermal performance, allowing for effective heat dissipation in high-power applications.
6. ESD Protection: Includes electrostatic discharge (ESD) protection, enhancing reliability and durability.
7. Applications: Suitable for use in DC-DC converters, power management systems, load switches, and other applications requiring efficient switching and power handling.
These features make the NVMFS6H836NLT1G a reliable choice for designers focusing on power efficiency and compactness.
Pinout
The NVMFS6H836NLT1G is a power MOSFET manufactured by ON Semiconductor. It features a single N-Channel MOSFET. This device is housed in a SO-8FL package, which typically has 8 pins. These pins are configured to facilitate connections to the gate, drain, and source terminals. The primary function of this MOSFET is to switch electronic signals in applications like power management in various electronic devices. It is designed for high efficiency with low on-resistance, making it suitable for use in power-sensitive applications.
Manufacturer
The NVMFS6H836NLT1G is manufactured by onsemi, formerly known as ON Semiconductor. onsemi is a global semiconductor company that designs and manufactures a wide range of semiconductor components. These components are used in various applications, including automotive, industrial, computing, consumer electronics, and communications. The company focuses on providing energy-efficient solutions and is known for its expertise in power management, analog, sensors, and custom devices. onsemi aims to enable smarter and more sustainable technologies that contribute to a more connected and efficient world.
Application
The NVMFS6H836NLT1G is a power MOSFET, specifically designed for use in high-efficiency power management applications. Its common application areas include:
1. DC-DC Converters: Used in buck, boost, or other converter topologies for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in automotive or industrial applications.
3. Power Supply: Employed in power supply circuits for improved efficiency and thermal performance.
4. Load Switching: Ideal for load management and switching applications due to its low on-resistance.
5. Automotive Systems: Utilized in various automotive electronics for power distribution and control.
Its design focuses on reducing conduction losses, making it suitable for applications where energy efficiency is critical.
1. DC-DC Converters: Used in buck, boost, or other converter topologies for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in automotive or industrial applications.
3. Power Supply: Employed in power supply circuits for improved efficiency and thermal performance.
4. Load Switching: Ideal for load management and switching applications due to its low on-resistance.
5. Automotive Systems: Utilized in various automotive electronics for power distribution and control.
Its design focuses on reducing conduction losses, making it suitable for applications where energy efficiency is critical.
Package
The NVMFS6H836NLT1G is a MOSFET transistor typically housed in a micro-8 FlatLead package, also known as a Power 56 package. This configuration is designed to offer efficient thermal performance and compact size suitable for various electronic applications.
