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NVMS5P02R2G
+StücklisteMOSFET P-CH 20V 3.95A 8SOIC
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HerstellerOnsemi
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Herstellerteil #NVMS5P02R2G
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Paket SOIC-8
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Auf Lager5768
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 3.95A (Ta) |
| Rds On(Max) @ Id Vgs | 33mOhm @ 5.4A, 4.5V |
| Vgs(th)(Max) @ Id | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance(Ciss)(Max) @ Vds | 1900 pF @ 16 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Übersicht
Description
The NVMS5P02R2G is a P-channel MOSFET, meaning it conducts when a negative voltage is applied to the gate relative to the source. This particular model is part of the company's MOSFET portfolio emphasizing low on-resistance, which minimizes power loss and enhances performance. It is frequently used in automotive, industrial, and consumer electronics where compact design and energy efficiency are critical.
Key features of the NVMS5P02R2G include its robust design for handling high currents and voltage levels, thermal efficiency, and reliability in harsh conditions. Its compact package makes it suitable for space-constrained applications, offering a balance of performance and efficiency.
Equivalent
1. IRF9540N from Infineon
2. FQP27P06 from ON Semiconductor
3. SI3456DV from Vishay
It is important to compare the datasheets to ensure compatibility with your specific application.
Features
1. Type: P-Channel MOSFET.
2. Voltage Rating: Typically supports a maximum of 20V for V_DS.
3. Current Capacity: Can handle a continuous current of up to 2.3A.
4. R_DS(on): Low on-resistance, typically around 75 mΩ at V_GS = -4.5V, which minimizes power loss.
5. Package: Comes in a compact SOT-23 package, making it suitable for space-constrained applications.
6. Threshold Voltage: Generally around -0.4V to -1.4V, allowing for efficient switching.
7. Applications: Ideal for load switching, power management in portable devices, and DC-DC converters.
8. Temperature Range: Operates efficiently across a wide temperature range, usually from -55°C to 150°C.
These features make the NVMS5P02R2G an efficient choice for low-voltage, high-efficiency electronic designs.
Pinout
1. Pin 1 (Gate): This is the control terminal used to turn the MOSFET on or off. Applying the appropriate voltage to the gate relative to the source allows current to flow between the drain and source.
2. Pin 2 (Source): This terminal is connected to the negative supply voltage in typical P-Channel MOSFET applications. It acts as the source of carriers.
3. Pin 3 (Drain): This is the terminal through which the controlled current flows out of the MOSFET.
The NVMS5P02R2G is used in various applications such as load switching, battery management, and power management circuits. Its compact SOT-23 package makes it suitable for space-constrained applications.
Manufacturer
Application
1. Load Switches: For controlling power distribution within electronic devices.
2. Battery Protection: Offers overcurrent protection in battery-operated applications.
3. Power Management: Used in power management circuits in portable electronics.
4. DC-DC Converters: Enhances performance and efficiency in voltage conversion systems.
5. Switching Applications: Suitable for low-voltage, high-speed switching tasks.
6. Notebook and Tablet PCs: For managing power distribution and conserving battery life.
Its low on-resistance and compact package make it ideal for space-constrained applications.