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NVTFS5826NLWFTWG
+StücklisteMOSFET N-CH 60V 7.6A 8WDFN
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HerstellerOnsemi
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Herstellerteil #NVTFS5826NLWFTWG
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Datenblatt NVTFS5826NLWFTWG DataSheet
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Auf Lager23199
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 7.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 850 pF @ 25 V |
| Power Dissipation (Max) | 3.2W (Ta), 22W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
Übersicht
Description
To understand it better, you would typically look for the manufacturer's datasheet or technical specifications. These documents provide details like functionality, applications, electrical characteristics, and additional features. If you have access to the source or a context where this term is used, that could offer further insights. If this model number pertains to a specific industry or application, consulting a professional or the manufacturer's support might be necessary for a comprehensive understanding.
Equivalent
1. Infineon BSC100N06NS3 G - An N-channel MOSFET with comparable voltage and current ratings.
2. Vishay SI7465DP - Another N-channel MOSFET with similar electrical characteristics.
3. STMicroelectronics STL75N4LLF6 - Offers comparable performance in terms of voltage and current handling.
When selecting an equivalent, ensure the specifications match your application requirements, like voltage, current, Rds(on), and package type.
Features
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs within a single package, allowing for designs requiring dual transistor applications.
2. Low On-Resistance: This MOSFET offers low on-resistance, which reduces conduction losses and enhances efficiency in power management applications.
3. Small Package: The device is available in a compact package, making it suitable for applications where space is a constraint.
4. Fast Switching Speed: It is designed for high-speed switching, which is essential for applications requiring rapid on/off states.
5. Thermal Performance: The package and construction offer good thermal performance, aiding in power dissipation and reliability.
6. Applications: Commonly used in DC-DC converters, load switches, and power management applications.
These features make the NVTFS5826NLWFTWG suitable for various electronic applications that require efficient power control and compact design.
Pinout
For precise information regarding pin count and functions for the NVTFS5826NLWFTWG, it is best to consult the datasheet provided by the manufacturer. The datasheet will give comprehensive details, including pin configuration, electrical characteristics, thermal information, and typical applications. You can usually find this information on the manufacturer's website or by contacting their technical support directly.
Manufacturer
onsemi emphasizes innovation and sustainable energy solutions, aiming to help its customers reduce global energy use. With a commitment to advancing technology, onsemi plays a crucial role in the development of components for applications such as electric vehicles, intelligent power management, and other cutting-edge technologies.
Application
1. Power Management: Used in DC-DC converters and power supply circuits for efficient power conversion and regulation.
2. Automotive Systems: Ideal for automotive power electronics due to its robustness and efficiency.
3. Motor Drives: Utilized in the control and operation of electric motors in industrial and consumer applications.
4. Load Switches: Functions as a switch for controlling power to various loads in electronic circuits.
5. Consumer Electronics: Applied in battery management and other power-related functions in portable devices.
Its low on-resistance and fast switching capabilities make it suitable for high-efficiency and compact designs.