PZT2907AT1G

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PZT2907AT1G

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TRANS PNP 60V 0.6A SOT223

  • HerstellerOnsemi

  • Herstellerteil #PZT2907AT1G

  • Paket SOT-223-4

  • Auf Lager7089

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type PNP
Current - Collector(Ic)(Max) 600 mA
Voltage - Collector Emitter Breakdown(Max) 60 V
Vce Saturation(Max) @ Ib Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff(Max) 10nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 150mA, 10V
Power - Max 1.5 W
Frequency - Transition 200MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The PZT2907AT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured by ON Semiconductor, it is part of the PZT series and is known for its reliability and efficient performance. This transistor is housed in a compact SOT-223 surface-mount package, which makes it suitable for high-density circuit boards and applications where space is a constraint.
Key specifications include a collector-emitter voltage (V_CEO) of 60V, a collector current (I_C) of up to 600 mA, and a power dissipation (P_D) of 1.5W. It features a high gain bandwidth product, making it versatile for various electronic circuits. Additionally, its low saturation voltage and high current gain enhance its performance in switching operations.
The PZT2907AT1G is commonly used in amplifiers, signal processing, and as a driver in power management systems. Its robust construction and thermal efficiency make it a popular choice in both consumer electronics and industrial applications.

Equivalent

The PZT2907AT1G is a PNP bipolar junction transistor often used in general-purpose amplification and switching. Equivalent products may include:
1. 2N2907A A widely recognized PNP transistor with similar specifications.
2. PN2907A: Another common equivalent with similar performance.
3. MMBT2907AA surface-mount version with equivalent characteristics.
4. BC557: A general-purpose PNP transistor that can be used as an equivalent in some circuits, though specifications may slightly differ.
Always verify specifications and pin configurations when choosing equivalents for specific applications.

Features

The PZT2907AT1G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Key features include:
1. Polarity: PNP
2. Collector-Emitter Voltage (Vceo): 60V
3. Collector-Current (Ic): 600mA
4. Power Dissipation (Pd): 625mW
5. DC Current Gain (hFE): Typically ranges from 100 to 300, enhancing amplification efficiency.
6. Package Type: SOT-223, which provides a compact form factor suitable for surface-mount assembly.
7. Temperature Range: Typically operates within the range of -55°C to +150°C, ensuring functionality in various environments.
8. High Switching Speeds: Suitable for high-speed switching tasks.
9. Complementary to: Works well with its NPN counterpart, the PZT2222A, for push-pull or complementary-pair applications.
These features make the PZT2907AT1G suitable for a variety of electronic projects and systems that require reliable switching and amplification with moderate power handling capabilities.

Pinout

The PZT2907AT1G is a PNP Bipolar Junction Transistor (BJT) commonly used for switching and amplifier applications. It typically comes in a SOT-223 package, which has 3 pins. The pin configuration is as follows:
1. Pin 1 (Base): This pin is used to control the transistor's operation. A small current input at the base allows a larger current to flow from the emitter to the collector.
2. Pin 2 (Collector): This pin is connected to the load, and it is where the larger current flows out of the transistor when it is in the "on" state.
3. Pin 3 (Emitter): This pin is connected to the ground or negative voltage supply in a PNP transistor, and it is where the current flows into the transistor.
The PZT2907AT1G is designed for medium power applications and offers low saturation voltage, making it suitable for tasks requiring efficient power handling and switching capabilities.

Manufacturer

The PZT2907AT1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a leading supplier of semiconductor-based solutions. They focus on driving energy efficient innovations, empowering customers to reduce global energy use, and creating a more sustainable future. onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices that help customers solve design challenges in automotive, communications, computing, consumer, industrial, medical, and military/aerospace applications.

Application

The PZT2907AT1G is a PNP bipolar junction transistor commonly used in various applications. Its primary areas include amplification and switching. In amplification, it serves in audio amplifiers and signal boosting circuits. For switching, it is utilized in driving loads such as relays, LEDs, and other low-power devices. Its robust performance and reliability make it suitable for use in consumer electronics, automotive systems, and industrial controls. Additionally, it can be employed in designing circuits requiring low to medium power amplification and switching, making it versatile for general-purpose electronic applications.

Package

The PZT2907AT1G is a PNP bipolar junction transistor (BJT) that typically comes in a SOT-223 package. This surface-mount package is suitable for medium power applications, providing efficient thermal performance and compact size for use in electronic circuits.

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