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RZM002P02T2L
+StücklisteMOSFET P-CH 20V 200MA VMT3
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HerstellerRohm Halbleiter
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Herstellerteil #RZM002P02T2L
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Auf Lager5579
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Spezifikationen
| Attribut | Wert |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 200mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.2V, 4.5V |
| Rds On(Max) @ Id Vgs | 1.2Ohm @ 200mA, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 1.4 nC @ 4.5 V |
| Vgs(Max) | ±10V |
| Input Capacitance(Ciss)(Max) @ Vds | 115 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VMT3 |
Übersicht
Description
If it is an academic course, the introduction would typically cover the objectives, key topics, and expected outcomes, alongside an overview of the syllabus. For a product or system, the introduction might include its purpose, main features, and benefits.
To gain specific information, you should refer to the official documentation, syllabus, or product manual associated with RZM002P02T2L, or contact the relevant instructor or organization for detailed insights. This will provide clarity on its scope and detailed content.
Equivalent
1. 2N7002 - A common N-channel MOSFET, though specifications should be verified for compatibility.
2. PMV20UN2 - A suitable alternative with comparable features.
Always confirm the electrical characteristics and package type to ensure compatibility with your specific application.
Features
1. Type: N-channel Enhancement mode MOSFET.
2. Voltage Rating: The device typically has a drain-source voltage rating suitable for low to moderate power applications.
3. Current Capacity: It offers a moderate current-carrying capability, typically suitable for portable devices.
4. Low On-Resistance: Features low on-state resistance, minimizing power loss and improving efficiency.
5. Compact Package: Available in small, surface-mount packages, making it ideal for space-constrained applications.
6. Fast Switching: Designed for fast switching speeds, enhancing performance in switching applications.
7. Thermal Performance: Good thermal dissipation characteristics for reliability in various operating conditions.
8. Applications: Suitable for use in load switching, power management, battery-operated devices, and DC-DC converters.
These features make the RZM002P02T2L a versatile component in electronics requiring efficient and compact switch solutions.
Pinout
1. Gate (G): This pin is used to control the MOSFET's operation. By applying a voltage to the gate, the device can be turned on or off.
2. Source (S): This pin is where the charge carriers (holes for P-channel) enter the MOSFET. It's typically connected to a higher voltage supply in P-channel configurations.
3. Drain (D): The drain is where the charge carriers exit the MOSFET. In a P-channel MOSFET, it's usually connected to the load.
The RZM002P02T2L is used in applications that require switching or amplification, such as power management circuits, load switches, and DC-DC converters. Its P-channel nature makes it suitable for high-side switching when a negative voltage relative to the source is applied to the gate.