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SCT055W65G3-4AG
+StücklisteTO247-4
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HerstellerSTMikroelektronik
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Herstellerteil #SCT055W65G3-4AG
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Auf Lager6748
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 15A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 721 pF @ 40 V |
| Power Dissipation (Max) | 210W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Base Product Number | SCT055 |
Übersicht
Description
The SCT055W65G3-4AG is a Silicon Carbide (SiC) MOSFET designed for high-efficiency power applications. It features a voltage rating of 650V and a current rating of 55A, making it suitable for use in power converters, inverters, and motor drives. The device offers low on-resistance and low switching losses, which contribute to improved thermal performance and enhanced system efficiency.
Key attributes include fast switching speeds, which enable higher frequency operation, and reduced cooling requirements. The SCT055W65G3-4AG is ideal for applications in renewable energy systems, electric vehicles, and industrial power supplies. Its robust design ensures reliability and durability under demanding conditions.
Additionally, the device is packaged in a TO-247 format, which facilitates easy mounting and heat dissipation. Overall, this SiC MOSFET is an excellent choice for engineers seeking to optimize performance and efficiency in their power electronic designs.
Key attributes include fast switching speeds, which enable higher frequency operation, and reduced cooling requirements. The SCT055W65G3-4AG is ideal for applications in renewable energy systems, electric vehicles, and industrial power supplies. Its robust design ensures reliability and durability under demanding conditions.
Additionally, the device is packaged in a TO-247 format, which facilitates easy mounting and heat dissipation. Overall, this SiC MOSFET is an excellent choice for engineers seeking to optimize performance and efficiency in their power electronic designs.
Equivalent
The SCT055W65G3-4AG is a Silicon Carbide (SiC) MOSFET. Equivalent products include the C3M0065120K, C3M0065120K, and the STPSC20065 from other manufacturers like Cree and STMicroelectronics, respectively. Always verify specifications such as voltage, current ratings, and thermal performance before substitution.
Features
The SCT055W65G3-4AG is a high-performance silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. Key features include:
1. Voltage Rating: Up to 650 V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current up to 55 A.
3. Low On-Resistance (RDS(on)): Provides improved efficiency and thermal performance, reducing power losses.
4. Fast Switching Speeds: Ideal for high-frequency applications, enhancing overall system responsiveness.
5. Temperature Stability: Operates effectively across a wide temperature range, making it reliable for various environments.
6. Easy to Drive: Compatible with standard gate drive circuits, simplifying integration into existing designs.
7. Robustness: Designed to withstand harsh conditions, ensuring durability and longevity.
These features make the SCT055W65G3-4AG suitable for applications such as inverters, power supplies, and motor control systems.
1. Voltage Rating: Up to 650 V, suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current up to 55 A.
3. Low On-Resistance (RDS(on)): Provides improved efficiency and thermal performance, reducing power losses.
4. Fast Switching Speeds: Ideal for high-frequency applications, enhancing overall system responsiveness.
5. Temperature Stability: Operates effectively across a wide temperature range, making it reliable for various environments.
6. Easy to Drive: Compatible with standard gate drive circuits, simplifying integration into existing designs.
7. Robustness: Designed to withstand harsh conditions, ensuring durability and longevity.
These features make the SCT055W65G3-4AG suitable for applications such as inverters, power supplies, and motor control systems.
Pinout
The SCT055W65G3-4AG is a Silicon Carbide (SiC) MOSFET with a total of 8 pins. The pin functions are as follows:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Main output terminal; current flows out of this pin.
3. Source (S): Main input terminal; current flows into this pin.
4. Gate Source (G-S): Provides a reference for the gate drive.
5. Body Diode Anode: Connects to the internal body diode.
6. Body Diode Cathode: Connects to the internal body diode.
7. Thermal Pad: Used for heat dissipation.
8. Drain (D): (Duplicate; typically used in configurations).
Ensure to consult the specific datasheet for detailed pin arrangements and electrical characteristics for proper implementation in your application.
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Main output terminal; current flows out of this pin.
3. Source (S): Main input terminal; current flows into this pin.
4. Gate Source (G-S): Provides a reference for the gate drive.
5. Body Diode Anode: Connects to the internal body diode.
6. Body Diode Cathode: Connects to the internal body diode.
7. Thermal Pad: Used for heat dissipation.
8. Drain (D): (Duplicate; typically used in configurations).
Ensure to consult the specific datasheet for detailed pin arrangements and electrical characteristics for proper implementation in your application.
Manufacturer
The SCT055W65G3-4AG is manufactured by STMicroelectronics. STMicroelectronics is a global leader in semiconductor solutions, providing a wide range of products and services in various sectors, including automotive, industrial, personal electronics, and communications. The company is known for its innovation in microcontrollers, analog devices, and power management technologies.
Founded in 1987 through the merger of Italian and French semiconductor companies, STMicroelectronics has since become a key player in the semiconductor industry, with a strong focus on sustainability and energy-efficient solutions. Their products are widely used in applications ranging from consumer electronics to smart cities, showcasing the company's commitment to advancing technology for a connected world.
STMicroelectronics operates globally, with manufacturing facilities, research and development centers, and sales offices in multiple countries, ensuring they can meet the diverse needs of their customers across different markets. Their expertise in both digital and analog design makes them a versatile partner for companies looking to enhance their technological capabilities.
Founded in 1987 through the merger of Italian and French semiconductor companies, STMicroelectronics has since become a key player in the semiconductor industry, with a strong focus on sustainability and energy-efficient solutions. Their products are widely used in applications ranging from consumer electronics to smart cities, showcasing the company's commitment to advancing technology for a connected world.
STMicroelectronics operates globally, with manufacturing facilities, research and development centers, and sales offices in multiple countries, ensuring they can meet the diverse needs of their customers across different markets. Their expertise in both digital and analog design makes them a versatile partner for companies looking to enhance their technological capabilities.
Application
The SCT055W65G3-4AG is a silicon carbide (SiC) MOSFET, primarily used in high-efficiency power electronics applications. Key application areas include:
1. Electric Vehicles (EVs): Enhancing energy efficiency in drive systems.
2. Renewable Energy: Optimizing inverters for solar and wind energy systems.
3. Industrial Automation: Improving power supply units and motor drives.
4. Data Centers: Reducing energy loss in power conversion systems.
5. Telecommunications: Enhancing power efficiency in base stations.
Its high thermal conductivity and fast switching capabilities make it suitable for demanding power applications.
1. Electric Vehicles (EVs): Enhancing energy efficiency in drive systems.
2. Renewable Energy: Optimizing inverters for solar and wind energy systems.
3. Industrial Automation: Improving power supply units and motor drives.
4. Data Centers: Reducing energy loss in power conversion systems.
5. Telecommunications: Enhancing power efficiency in base stations.
Its high thermal conductivity and fast switching capabilities make it suitable for demanding power applications.
Package
The SCT055W65G3-4AG is packaged in a TO-247 format. This is a three-terminal package commonly used for high-power applications, providing good thermal performance and ease of mounting on heatsinks.
