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SCT2H12NZGC11
+StücklisteSICFET N-CH 1700V 3.7A TO3PFM
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HerstellerRohm Halbleiter
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Herstellerteil #SCT2H12NZGC11
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Datenblatt SCT2H12NZGC11 DataSheet
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Paket TO-3
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Auf Lager5539
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain(Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 18V |
| Rds On(Max) @ Id Vgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th)(Max) @ Id | 4V @ 900µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 18 V |
| Vgs(Max) | +22V, -6V |
| Input Capacitance(Ciss)(Max) @ Vds | 184 pF @ 800 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
Übersicht
Description
For a precise introduction, consider the following steps:
1. Context Identification: Determine the industry or field relevant to SCT2H12NZGC11. This could be electronics, automotive, computing, etc.
2. Manufacturer or Distributor: Identify the company associated with the code, which can provide more context and specifics about the component or product.
3. Product Specifications: Look for technical specifications or datasheets that outline the features, functions, and applications of SCT2H12NZGC11.
4. Usage and Applications: Explore how this component is utilized in practical scenarios, which might include integration into larger systems or standalone functions.
5. Support and Documentation: Check for any available documentation, user guides, or support forums that can provide deeper insights.
For accurate details, consult relevant industry resources or contact the manufacturer directly.
Equivalent
Features
1. Voltage and Current Ratings: Typically designed for medium to high voltage applications, offering a balance of voltage and current handling capabilities.
2. Switching Speed: Known for fast switching speeds, making it suitable for high-frequency applications.
3. Efficiency: Offers low saturation voltage, which contributes to reduced power loss and improved efficiency.
4. Thermal Performance: Equipped with good thermal characteristics, allowing for operation in varying temperature conditions.
5. Robust Design: Built to withstand high voltage fluctuations and provide reliable performance under demanding conditions.
6. Applications: Commonly used in industrial inverters, motor drives, and other power conversion systems.
7. Package Type: Generally found in standard IGBT packaging, ensuring compatibility with a range of circuit designs.
These features make the SCT2H12NZGC11 a versatile choice for various power electronics applications. Always refer to the datasheet for detailed specifications and application guidelines.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source terminals. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the terminal through which the load current enters the MOSFET. It is connected to the higher potential in the circuit.
3. Source (S): This terminal allows the load current to exit the MOSFET and is connected to the lower potential in the circuit.
These pins allow the MOSFET to function as a switch or amplifier in various electronic circuits, controlling the flow of electrical current. For detailed specifications and applications, referring to the manufacturer's datasheet is recommended.