SCT2H12NZGC11

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SCT2H12NZGC11

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SICFET N-CH 1700V 3.7A TO3PFM

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain(Id) @ 25°C 3.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 18V
Rds On(Max) @ Id Vgs 1.5Ohm @ 1.1A, 18V
Vgs(th)(Max) @ Id 4V @ 900µA
Gate Charge(Qg)(Max) @ Vgs 14 nC @ 18 V
Vgs(Max) +22V, -6V
Input Capacitance(Ciss)(Max) @ Vds 184 pF @ 800 V
Power Dissipation (Max) 35W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PFM

Übersicht

Description

"SCT2H12NZGC11" seems to be a model number or code that is not widely recognized in public databases or common knowledge as of my last update. It could potentially be a part number, product identifier, or a code related to a specific domain such as electronics, machinery, or a proprietary technology.
For a precise introduction, consider the following steps:
1. Context Identification: Determine the industry or field relevant to SCT2H12NZGC11. This could be electronics, automotive, computing, etc.
2. Manufacturer or Distributor: Identify the company associated with the code, which can provide more context and specifics about the component or product.
3. Product Specifications: Look for technical specifications or datasheets that outline the features, functions, and applications of SCT2H12NZGC11.
4. Usage and Applications: Explore how this component is utilized in practical scenarios, which might include integration into larger systems or standalone functions.
5. Support and Documentation: Check for any available documentation, user guides, or support forums that can provide deeper insights.
For accurate details, consult relevant industry resources or contact the manufacturer directly.

Equivalent

The SCT2H12NZGC11 is a silicon carbide (SiC) MOSFET produced by ROHM Semiconductor. Equivalent products from other manufacturers include the C3M0016120K from Wolfspeed, the SCT3040KL from Littelfuse, and the SP6LI060120 from Infineon. These alternatives are characterized by similar voltage and current ratings, switching speeds, and SiC technology advantages. Always verify electrical characteristics and package compatibility when considering equivalents.

Features

The SCT2H12NZGC11 is a part of Toshiba's line of Insulated Gate Bipolar Transistors (IGBTs). Here are some key features:
1. Voltage and Current Ratings: Typically designed for medium to high voltage applications, offering a balance of voltage and current handling capabilities.

2. Switching Speed: Known for fast switching speeds, making it suitable for high-frequency applications.
3. Efficiency: Offers low saturation voltage, which contributes to reduced power loss and improved efficiency.
4. Thermal Performance: Equipped with good thermal characteristics, allowing for operation in varying temperature conditions.
5. Robust Design: Built to withstand high voltage fluctuations and provide reliable performance under demanding conditions.
6. Applications: Commonly used in industrial inverters, motor drives, and other power conversion systems.
7. Package Type: Generally found in standard IGBT packaging, ensuring compatibility with a range of circuit designs.
These features make the SCT2H12NZGC11 a versatile choice for various power electronics applications. Always refer to the datasheet for detailed specifications and application guidelines.

Pinout

The SCT2H12NZGC11 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from ROHM Semiconductor. It features a pin count of 3, which is typical for many discrete MOSFETs. The functions of these pins are generally as follows:
1. Gate (G): This pin is used to control the conductivity between the drain and source terminals. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the terminal through which the load current enters the MOSFET. It is connected to the higher potential in the circuit.
3. Source (S): This terminal allows the load current to exit the MOSFET and is connected to the lower potential in the circuit.
These pins allow the MOSFET to function as a switch or amplifier in various electronic circuits, controlling the flow of electrical current. For detailed specifications and applications, referring to the manufacturer's datasheet is recommended.

Manufacturer

The SCT2H12NZGC11 is manufactured by Rohm Semiconductor. Rohm is a Japanese company that specializes in the design and manufacturing of electronic components. Founded in 1958, it is headquartered in Kyoto, Japan. The company produces a wide range of semiconductor products, including integrated circuits (ICs), diodes, transistors, power devices, and optoelectronics. Rohm serves various industries, such as automotive, consumer electronics, industrial, and telecommunications, providing solutions that support advancements in technology and enhance energy efficiency.

Application

The SCT2H12NZGC11 is a MOSFET transistor typically used in electronic applications requiring efficient switching and amplification. Its common application areas include power management systems, such as DC-DC converters and power supply circuits, due to its ability to handle high voltages and currents efficiently. It is also used in motor control circuits, inverters, and automotive systems, providing reliable performance in high-speed switching applications. Additionally, it is suitable for use in LED lighting systems and various industrial electronics, where robust and efficient power handling is critical.

Package

The SCT2H12NZGC11 is a semiconductor device packaged in a DPAK (TO-252) form. DPAK is a surface-mount package style that is commonly used for transistors and other semiconductor devices, providing a compact design suitable for automated assembly processes.

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