SI6981DQ-T1-GE3

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SI6981DQ-T1-GE3

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MOSFET 2P-CH 20V 4.1A 8TSSOP

  • HerstellerVishay Siliconix

  • Herstellerteil #SI6981DQ-T1-GE3

  • Auf Lager9884

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7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Series TrenchFET®
Part Status Obsolete
Base Product Number SI6981
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A
Rds On (Max) @ Id, Vgs 31mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 300µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Packaging Tape & Reel (TR)

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