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SI7938DP-T1-GE3
+StücklisteMOSFET 2N-CH 40V 60A PPAK SO8
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HerstellerVishay Siliconix
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Herstellerteil #SI7938DP-T1-GE3
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Auf Lager2442
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 20V |
| Power - Max | 46W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
| Base Product Number | SI7938 |
Übersicht
Description
The SI7938DP-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. With a high voltage rating, typically around 30V, it is suitable for a variety of applications, including DC-DC converters, power supplies, and motor drives.
This MOSFET is housed in a compact TO-252 package, making it suitable for space-constrained designs. It offers fast switching capabilities, allowing for high-frequency operation, which is advantageous in modern electronic circuits.
The device also includes a built-in body diode, providing additional functionality for applications requiring synchronous rectification. Its thermal performance enables it to handle significant power levels, contributing to system reliability.
Overall, the SI7938DP-T1-GE3 is ideal for engineers seeking an efficient, high-performance solution in their electronic designs.
This MOSFET is housed in a compact TO-252 package, making it suitable for space-constrained designs. It offers fast switching capabilities, allowing for high-frequency operation, which is advantageous in modern electronic circuits.
The device also includes a built-in body diode, providing additional functionality for applications requiring synchronous rectification. Its thermal performance enables it to handle significant power levels, contributing to system reliability.
Overall, the SI7938DP-T1-GE3 is ideal for engineers seeking an efficient, high-performance solution in their electronic designs.
Equivalent
The SI7938DP-T1-GE3 is an N-channel MOSFET. Equivalent products include the IRF840, STP16NF06, and BUK7Y6R8-100. Check specifications like threshold voltage, maximum current, and RDS(on) for compatibility. Always verify with manufacturer datasheets for exact matches.
Features
The SI7938DP-T1-GE3 is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of up to 40A.
3. R_DS(on): Low on-resistance, typically around 5.5 mΩ, enhancing efficiency and reducing power loss.
4. Gate Threshold Voltage: V_GS(th) ranges from 1.8V to 2.5V, suitable for low-voltage drive applications.
5. Package Type: Available in a DPAK (TO-252) package, allowing for easy thermal management and PCB integration.
6. Fast Switching: High-speed switching capabilities suitable for various applications, including power management and motor control.
7. Temperature Range: Operating junction temperature up to 150°C, providing reliability in demanding environments.
These features make the SI7938DP-T1-GE3 ideal for use in DC-DC converters, power supplies, and other high-efficiency power applications.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Continuous drain current (I_D) of up to 40A.
3. R_DS(on): Low on-resistance, typically around 5.5 mΩ, enhancing efficiency and reducing power loss.
4. Gate Threshold Voltage: V_GS(th) ranges from 1.8V to 2.5V, suitable for low-voltage drive applications.
5. Package Type: Available in a DPAK (TO-252) package, allowing for easy thermal management and PCB integration.
6. Fast Switching: High-speed switching capabilities suitable for various applications, including power management and motor control.
7. Temperature Range: Operating junction temperature up to 150°C, providing reliability in demanding environments.
These features make the SI7938DP-T1-GE3 ideal for use in DC-DC converters, power supplies, and other high-efficiency power applications.
Pinout
The SI7938DP-T1-GE3 is a N-channel MOSFET from Vishay with a pin count of 8. It is designed for high-efficiency applications, such as DC-DC converters and power management systems.
### Pin Functionality:
1. Gate (G): Controls the MOSFET’s operation (input signal).
2. Drain (D): Connects to the load; current flows out of this terminal.
3. Source (S): Connects to ground or negative side of the circuit; current flows into this terminal.
4. Body Diode (internal): Provides reverse conduction capability.
Typical applications include synchronous rectification, power supplies, and load switching. The device features low on-resistance and fast switching speeds, making it suitable for high-frequency operations.
Always refer to the specific datasheet for detailed electrical characteristics and additional pin information.
### Pin Functionality:
1. Gate (G): Controls the MOSFET’s operation (input signal).
2. Drain (D): Connects to the load; current flows out of this terminal.
3. Source (S): Connects to ground or negative side of the circuit; current flows into this terminal.
4. Body Diode (internal): Provides reverse conduction capability.
Typical applications include synchronous rectification, power supplies, and load switching. The device features low on-resistance and fast switching speeds, making it suitable for high-frequency operations.
Always refer to the specific datasheet for detailed electrical characteristics and additional pin information.
Manufacturer
The SI7938DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA, and is recognized for its extensive product portfolio, which includes power MOSFETs, diodes, capacitors, resistors, and inductors, among other components.
Vishay serves a wide range of industries, including automotive, industrial, telecommunications, and consumer electronics. The company is known for its commitment to innovation and quality, providing components that are essential for modern electronic systems. Their products are designed to enhance performance, reliability, and efficiency in various applications, making Vishay a key player in the electronics manufacturing sector.
Vishay serves a wide range of industries, including automotive, industrial, telecommunications, and consumer electronics. The company is known for its commitment to innovation and quality, providing components that are essential for modern electronic systems. Their products are designed to enhance performance, reliability, and efficiency in various applications, making Vishay a key player in the electronics manufacturing sector.
Application
The SI7938DP-T1-GE3 is a N-channel MOSFET primarily used in applications such as DC-DC converters, power management, and switching power supplies. Its low R_DS(on) and high efficiency make it suitable for battery management systems, power distribution, and motor control. Additionally, it is utilized in consumer electronics, automotive applications, and renewable energy systems. The device's robust performance under high temperatures and various load conditions enhances its reliability in demanding environments.
Package
The SI7938DP-T1-GE3 is packaged in a SO-8 (Small Outline) package type. This surface-mount packaging is designed for efficient thermal performance and space-saving in electronic applications.
