SMMBTA56LT1G

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SMMBTA56LT1G

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TRANS PNP 80V 0.5A SOT23-3

  • HerstellerOnsemi

  • Herstellerteil #SMMBTA56LT1G

  • Paket SOT-23-3

  • Auf Lager2141

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Active
Transistor Type PNP
Current - Collector(Ic)(Max) 500 mA
Voltage - Collector Emitter Breakdown(Max) 80 V
Vce Saturation(Max) @ Ib Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff(Max) 100nA
DC Current Gain(h FE)(Min) @ Ic Vce 100 @ 100mA, 1V
Power - Max 225 mW
Frequency - Transition 50MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23 package, designed for general-purpose amplification and switching applications. Key features include:
- Voltage Rating: -80V (VCEO)
- Current Rating: -500mA (IC)
- Low Saturation Voltage: Enhances efficiency in switching.
- High Current Gain (hFE): Typically 100–250, ensuring good signal amplification.
Common uses include load switching, signal amplification, and driver stages in portable electronics, power management, and automotive circuits. Its small form factor makes it ideal for space-constrained designs.
For detailed specs, refer to the datasheet from manufacturers like ON Semiconductor.

Equivalent

Equivalent products to the SMMBTA56LT1G (PNP transistor) include:
- MMBTA56LT1G (Same specs, different package)
- 2N2907A (General-purpose PNP)
- BC856B (SMD PNP, similar characteristics)
- KSA992 (Low-noise PNP)
Check datasheets for exact compatibility in voltage, current, and gain (hFE).

Features

The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a small SOT-23 package. Key features:
- Type: PNP transistor
- Voltage Ratings:
- Collector-Emitter Voltage (V_CEO): -80V
- Collector-Base Voltage (V_CBO): -80V
- Emitter-Base Voltage (V_EBO): -5V
- Current Ratings:
- Continuous Collector Current (I_C): -500mA
- Peak Current (I_CM): -1A
- Power Dissipation (P_D): 225mW
- Gain (h_FE): 40–250 (at 150mA)
- Low Saturation Voltage: V_CE(sat) ~ -0.25V (at 50mA)
- Package: SOT-23 (3-pin)
- Applications: Switching, amplification, and load driving in compact circuits.
Compact and efficient, it’s ideal for space-constrained designs.

Pinout

The SMMBTA56LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 package, meaning it has 3 pins.
Pin Functions (when viewing the flat side with pins down):
1. Emitter (E): Left pin – connected to the ground or lower voltage in circuits.
2. Base (B): Middle pin – controls the transistor's switching/amplification.
3. Collector (C): Right pin – connects to the load or higher voltage.
Key Features:
- PNP polarity (current flows from Emitter to Collector when Base is pulled low).
- Low power, general-purpose switching/amplification.
- Max ratings: 80V (VCEO), 500mA (IC).
Used in signal amplification, switching circuits, and driver applications.

Application

The SMMBTA56LT1G is a PNP bipolar transistor commonly used in:
1. Switching Circuits – For load control in low-power applications.
2. Amplification – Small-signal amplification in audio and RF stages.
3. Signal Inversion – Logic level shifting in digital circuits.
4. Consumer Electronics – Found in devices like remote controls, LED drivers, and portable gadgets.
5. Automotive Systems – Used in sensors and low-power control modules.
Its compact SOT-23 package makes it suitable for space-constrained designs.

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