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MOSFET 2NCH 20V 100MA ES6
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HerstellerToshiba Halbleiter und Speicher
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Herstellerteil #SSM6P35FE,LM
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Datenblatt SSM6P35FE,LM DataSheet
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Paket SOT-666
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Auf Lager3140
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 100mA |
| Rds On(Max) @ Id Vgs | 8Ohm @ 50mA, 4V |
| Vgs(th)(Max) @ Id | 1V @ 1mA |
| Input Capacitance(Ciss)(Max) @ Vds | 12.2pF @ 3V |
| Power - Max | 150mW |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
