STB28N60DM2

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STB28N60DM2

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MOSFET N-CH 600V 21A D2PAK

  • HerstellerSTMikroelektronik

  • Herstellerteil #STB28N60DM2

  • Auf Lager16964

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Spezifikationen

Attribut Wert
Series MDmesh™ DM2
Part Status Active
Base Product Number STB28
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2PAK)
Package TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Cut Tape (CT), Tape & Reel (TR)

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