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STB7NK80ZT4
+StücklisteMOSFET N-CH 800V 5.2A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB7NK80ZT4
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Datenblatt STB7NK80ZT4 DataSheet
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Auf Lager5369
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Spezifikationen
| Attribut | Wert |
| Series | SuperMESH™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 5.2A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.8Ohm @ 2.6A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 56 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1138 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB7NK80 |
Übersicht
Description
Key features of the STB7NK80ZT4 include low on-state resistance (RDS(on)), which helps reduce power losses during operation, and fast switching capabilities that enhance efficiency. Its TO-220 package allows for effective heat dissipation, making it ideal for demanding environments.
The device also offers excellent thermal stability and robustness, ensuring reliable performance under various conditions. Overall, the STB7NK80ZT4 is a versatile choice for engineers looking for efficient power solutions in high-voltage applications.
Equivalent
Features
- Voltage Rating: 800V, allowing it to handle high voltage applications.
- Continuous Drain Current: Up to 7A, suitable for medium power loads.
- RDS(on): Low on-resistance of 0.5 ohms, leading to reduced conduction losses and improved efficiency.
- Gate Threshold Voltage (Vgs): Typically between 2V to 4V, facilitating easy driving with standard control voltages.
- Fast Switching: Capable of high-speed operation, making it ideal for high-frequency applications.
- Package Type: Available in TO-220 and DPAK packages, providing versatility for different thermal and space requirements.
- Robustness: Designed to withstand harsh conditions, suitable for automotive and industrial environments.
These features make the STB7NK80ZT4 an excellent choice for various power electronics applications, including converters, inverters, and motor drives.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this terminal allows current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET from the load. It connects to the higher voltage side.
3. Source (S): This terminal connects to the ground or lower voltage side, allowing current to flow out of the MOSFET.
The STB7NK80ZT4 is designed for high voltage applications with a maximum drain-source voltage (V_DS) of 800V and can handle a continuous drain current (I_D) of up to 7A. It offers low R_DS(on) for improved efficiency in switching applications.
Manufacturer
Founded in 1987 through the merger of Italian and French companies, STMicroelectronics operates in various sectors such as automotive, industrial, personal electronics, and communications. The company is renowned for its innovation and commitment to sustainability, providing solutions that drive efficiency and reduce environmental impact.
STMicroelectronics has a significant presence in the global market, focusing on advanced technologies and high-performance products aimed at enabling the Internet of Things (IoT), artificial intelligence (AI), and smart technologies across various applications. The STB7NK80ZT4 is a specific type of power MOSFET designed for applications requiring high voltage and high current handling, exemplifying the company's expertise in power management solutions.
Application
1. Switching Power Supplies: Efficiently regulate voltage in converters.
2. Motor Control: Used in driving electric motors in industrial and consumer applications.
3. Lighting Controls: Suitable for LED drivers and dimmers.
4. Power Management: Employed in battery management systems for energy efficiency.
5. Inverters: Utilized in renewable energy systems, such as solar inverters.
Its robust performance makes it ideal for high-efficiency and high-temperature environments.