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STF27N60M2-EP
+StücklisteMOSFET N-CH 600V 20A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF27N60M2-EP
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Datenblatt STF27N60M2-EP DataSheet
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Auf Lager9560
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Spezifikationen
| Attribut | Wert |
| Series | MDmesh™ M2-EP |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 163mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 4.75V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1320 pF @ 100 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
| Package/Case | TO-220-3 Full Pack |
| BaseProductNumber | STF27 |
Übersicht
Description
The STF27N60M2-EP is a high-voltage N-channel MOSFET designed for power applications, featuring a voltage rating of 600V and a continuous current rating of 27A. Part of STMicroelectronics' "MDmesh" technology, it offers low on-resistance and high efficiency, making it suitable for use in switch-mode power supplies, motor drives, and audio amplifiers.
Key features include a fast switching speed, which reduces switching losses, and a thermal resistance design that enhances reliability in high-temperature environments. Its TO-220 package allows for efficient heat dissipation and easy mounting on PCBs. The device is ideal for applications requiring high power and efficiency, including renewable energy systems and industrial automation.
The STF27N60M2-EP also has built-in ESD protection and is compliant with RoHS standards, making it environmentally friendly. Overall, it combines performance with reliability, making it a preferred choice for engineers and designers in various power electronics applications.
Key features include a fast switching speed, which reduces switching losses, and a thermal resistance design that enhances reliability in high-temperature environments. Its TO-220 package allows for efficient heat dissipation and easy mounting on PCBs. The device is ideal for applications requiring high power and efficiency, including renewable energy systems and industrial automation.
The STF27N60M2-EP also has built-in ESD protection and is compliant with RoHS standards, making it environmentally friendly. Overall, it combines performance with reliability, making it a preferred choice for engineers and designers in various power electronics applications.
Equivalent
The STF27N60M2-EP is a N-channel MOSFET with a 600V rating and 27A continuous current. Equivalent products include the STP27N60M2, IRFHE40, and IXFH27N60. When considering equivalents, check parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility. Always verify specific application requirements and operating conditions.
Features
The STF27N60M2-EP is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: 600V max drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 27A, suitable for high-power applications.
3. R_DS(on): Low on-resistance of 0.27Ω, which helps reduce conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, facilitating easy drive.
5. Fast Switching: Optimized for high-frequency applications, making it suitable for converters and inverters.
6. Package: Available in TO-247 package, providing efficient thermal dissipation.
7. Robustness: Designed for high reliability and ruggedness in harsh operating conditions.
These features make the STF27N60M2-EP ideal for applications such as power supplies, motor drives, and other high-voltage switching circuits.
1. Voltage Rating: 600V max drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 27A, suitable for high-power applications.
3. R_DS(on): Low on-resistance of 0.27Ω, which helps reduce conduction losses.
4. Gate Threshold Voltage: V_GS(th) ranges from 2V to 4V, facilitating easy drive.
5. Fast Switching: Optimized for high-frequency applications, making it suitable for converters and inverters.
6. Package: Available in TO-247 package, providing efficient thermal dissipation.
7. Robustness: Designed for high reliability and ruggedness in harsh operating conditions.
These features make the STF27N60M2-EP ideal for applications such as power supplies, motor drives, and other high-voltage switching circuits.
Pinout
The STF27N60M2-EP is a N-channel MOSFET with a pin count of 3. The pin configuration includes:
1. Gate (G): Controls the MOSFET's on/off state by applying voltage.
2. Drain (D): The terminal through which the load current flows when the device is in the on state.
3. Source (S): The terminal that connects to the ground or the negative side of the load.
This MOSFET is designed for high-voltage applications, rated for 600V and a continuous drain current of up to 27A, making it suitable for power supplies, motor drives, and industrial applications. Its features include low on-resistance and fast switching capabilities, enhancing efficiency in power conversion.
1. Gate (G): Controls the MOSFET's on/off state by applying voltage.
2. Drain (D): The terminal through which the load current flows when the device is in the on state.
3. Source (S): The terminal that connects to the ground or the negative side of the load.
This MOSFET is designed for high-voltage applications, rated for 600V and a continuous drain current of up to 27A, making it suitable for power supplies, motor drives, and industrial applications. Its features include low on-resistance and fast switching capabilities, enhancing efficiency in power conversion.
Manufacturer
The STF27N60M2-EP is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics specializes in designing and manufacturing a wide range of semiconductor solutions, including microcontrollers, power management ICs, analog devices, and various types of transistors like MOSFETs. The company serves multiple sectors, including automotive, industrial, personal electronics, and communication equipment. Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation and commitment to sustainability in technology development. The STF27N60M2-EP, specifically, is a high-voltage N-channel MOSFET used in power applications, highlighting their focus on efficient and reliable power management solutions.
Application
The STF27N60M2-EP is a high-voltage MOSFET primarily used in power electronics applications. Key application areas include:
1. Switching Power Supplies: For efficient power conversion and regulation.
2. Motor Drives: In industrial and consumer motor control systems.
3. DC-DC Converters: For renewable energy systems, such as solar inverters.
4. Lighting Control: In LED drivers and dimming circuits.
5. HVAC Systems: For efficient control of compressors and fans.
6. Telecommunications: In power amplifiers and RF applications.
Its high voltage rating (600V) and efficient switching characteristics make it suitable for these high-performance applications.
1. Switching Power Supplies: For efficient power conversion and regulation.
2. Motor Drives: In industrial and consumer motor control systems.
3. DC-DC Converters: For renewable energy systems, such as solar inverters.
4. Lighting Control: In LED drivers and dimming circuits.
5. HVAC Systems: For efficient control of compressors and fans.
6. Telecommunications: In power amplifiers and RF applications.
Its high voltage rating (600V) and efficient switching characteristics make it suitable for these high-performance applications.
Package
The STF27N60M2-EP is packaged in a TO-220 format, which is a commonly used package type for power MOSFETs. This package provides efficient heat dissipation and easy mounting on heat sinks, making it suitable for high-power applications.
