Abbildungen dienen nur als Referenz
STGP8NC60KD
+StücklisteIGBT 600V 15A TO-220
-
HerstellerSTMikroelektronik
-
Herstellerteil #STGP8NC60KD
-
Auf Lager6084
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | PowerMESH™ |
| PartStatus | Active |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 15 A |
| Vce(on)(Max)@Vge,Ic | 2.75V @ 15V, 3A |
| Power-Max | 65 W |
| SwitchingEnergy | 55µJ (on), 85µJ (off) |
| InputType | Standard |
| GateCharge | 19 nC |
| Td(on/off)@25°C | 17ns/72ns |
| TestCondition | 390V, 3A, 10Ohm, 15V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-220-3 |
| SupplierDevicePackage | TO-220 |
| BaseProductNumber | STGP8 |
| Current-CollectorPulsed(Icm) | 30 A |
| ReverseRecoveryTime(trr) | 23.5 ns |
Übersicht
Description
The STGP8NC60KD is a high-performance N-channel power MOSFET designed for various switching applications, particularly in power electronics. It is part of STMicroelectronics' "SuperMESH" technology, which enhances efficiency and reduces switching losses. This MOSFET features a voltage rating of 600V and a continuous drain current rating of up to 8A, making it suitable for use in power supply circuits, motor controls, and inverters.
Key specifications include low on-resistance (Rds(on)), fast switching speeds, and high thermal stability, which ensure better thermal management and reliability in demanding environments. The device typically comes in a TO-220 package, facilitating easy mounting and effective heat dissipation. The STGP8NC60KD is ideal for applications requiring high voltage and efficiency, making it a popular choice among engineers in designing robust power systems.
Key specifications include low on-resistance (Rds(on)), fast switching speeds, and high thermal stability, which ensure better thermal management and reliability in demanding environments. The device typically comes in a TO-220 package, facilitating easy mounting and effective heat dissipation. The STGP8NC60KD is ideal for applications requiring high voltage and efficiency, making it a popular choice among engineers in designing robust power systems.
Equivalent
The STGP8NC60KD is a high-voltage MOSFET, and its equivalents include the IRF840, FQP8N60, and MTP8N60E. These components share similar specifications, such as voltage ratings around 600V and current ratings up to 8A, making them suitable alternatives in various applications. Always verify the specific parameters and characteristics for compatibility in your circuit.
Features
The STGP8NC60KD is an N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) is 8A, suitable for various applications.
3. R_DS(on): Low on-resistance of about 0.8Ω (typical), minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing it to operate efficiently with lower gate voltages.
5. Fast Switching: Optimized for fast switching applications, making it ideal for power supply circuits and converters.
6. Package Type: Available in a TO-220 package, which facilitates heat dissipation and easy mounting.
7. Temperature Range: Operating temperature rated from -55°C to +150°C, ensuring reliability in various environments.
Overall, the STGP8NC60KD combines high performance, efficiency, and reliability for demanding electronic applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V.
2. Current Rating: Continuous drain current (I_D) is 8A, suitable for various applications.
3. R_DS(on): Low on-resistance of about 0.8Ω (typical), minimizing power loss during operation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing it to operate efficiently with lower gate voltages.
5. Fast Switching: Optimized for fast switching applications, making it ideal for power supply circuits and converters.
6. Package Type: Available in a TO-220 package, which facilitates heat dissipation and easy mounting.
7. Temperature Range: Operating temperature rated from -55°C to +150°C, ensuring reliability in various environments.
Overall, the STGP8NC60KD combines high performance, efficiency, and reliability for demanding electronic applications.
Pinout
The STGP8NC60KD is a power MOSFET from STMicroelectronics, featuring a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate switches the transistor on or off.
2. Drain (D): This is the terminal through which the current flows out when the device is on. It's connected to the load in a typical circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The current enters through this terminal when the device is conducting.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and can handle continuous drain current (I_D) of up to 8A.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate switches the transistor on or off.
2. Drain (D): This is the terminal through which the current flows out when the device is on. It's connected to the load in a typical circuit.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. The current enters through this terminal when the device is conducting.
This MOSFET is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and can handle continuous drain current (I_D) of up to 8A.
Manufacturer
The STGP8NC60KD is manufactured by STMicroelectronics, a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. STMicroelectronics is known for its wide range of products, including integrated circuits, microcontrollers, and various semiconductor devices used in automotive, industrial, consumer electronics, and communication applications. The company plays a significant role in the development of advanced technologies, including power management, sensor solutions, and embedded systems. STMicroelectronics focuses on innovation and sustainability, contributing to various sectors by enabling smart and efficient electronic solutions.
Application
The STGP8NC60KD is a power MOSFET primarily used in applications such as power supplies, motor drives, and inverter circuits. It is suitable for high-efficiency switching applications in consumer electronics, industrial equipment, and renewable energy systems like solar inverters. Its features, including high voltage and current handling capabilities, make it ideal for energy conversion tasks and automotive power management systems. Additionally, it can be employed in lighting applications and various electronic devices requiring robust power handling.
Package
The STGP8NC60KD is packaged in a TO-220 format. This package type is commonly used for power devices, offering good thermal performance and ease of mounting on heatsinks.
