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STH140N8F7-2
+StücklisteMOSFET N-CH 80V 90A H2PAK-2
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HerstellerSTMikroelektronik
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Herstellerteil #STH140N8F7-2
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Auf Lager3779
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Spezifikationen
| Attribut | Wert |
| Series | DeepGATE™, STripFET™ VII |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 4mOhm @ 45A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 96 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6340 pF @ 40 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | H2PAK-2 |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STH140 |
Übersicht
Description
The STH140N8F7-2 is an N-channel MOSFET designed for high-performance applications in power management and switching. It features a low on-resistance, enabling efficient conduction and minimizing power loss. With a voltage rating of 80V and a maximum continuous drain current of 140A, it is suitable for high-voltage applications.
This MOSFET is often used in DC-DC converters, motor drivers, and power supplies, where efficiency and thermal performance are crucial. Its fast switching capabilities allow for quick response times, making it ideal for applications requiring rapid switching cycles.
Additionally, it has a robust thermal dissipation design, which helps manage heat during operation, enhancing reliability and longevity. The STH140N8F7-2 is packaged in a TO-220 or DPAK format, allowing for easy integration into various electronic circuits. Overall, it is a versatile component for engineers seeking a reliable solution for high-power electronic designs.
This MOSFET is often used in DC-DC converters, motor drivers, and power supplies, where efficiency and thermal performance are crucial. Its fast switching capabilities allow for quick response times, making it ideal for applications requiring rapid switching cycles.
Additionally, it has a robust thermal dissipation design, which helps manage heat during operation, enhancing reliability and longevity. The STH140N8F7-2 is packaged in a TO-220 or DPAK format, allowing for easy integration into various electronic circuits. Overall, it is a versatile component for engineers seeking a reliable solution for high-power electronic designs.
Equivalent
The STH140N8F7-2 is an N-channel MOSFET. Equivalent products include:
1. IRF140N
2. FQP140N
3. STP140N
4. MTP140N
Ensure to verify specifications like voltage, current ratings, and R_DS(on) to confirm compatibility for your specific application.
1. IRF140N
2. FQP140N
3. STP140N
4. MTP140N
Ensure to verify specifications like voltage, current ratings, and R_DS(on) to confirm compatibility for your specific application.
Features
The STH140N8F7-2 is an N-channel power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 80V, making it suitable for various power management applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 140A, allowing it to accommodate high current loads.
3. Low RDS(on): With a low on-resistance (RDS(on)) of approximately 7.5 mΩ, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching: Optimized for quick switching, it improves performance in high-frequency applications.
5. Thermal Performance: The MOSFET features a robust thermal management design, enabling efficient heat dissipation.
6. Package: It comes in an TO-220 package, facilitating easy mounting and heat sink integration.
These characteristics make the STH140N8F7-2 ideal for use in power supplies, motor drives, and DC-DC converters.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 80V, making it suitable for various power management applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 140A, allowing it to accommodate high current loads.
3. Low RDS(on): With a low on-resistance (RDS(on)) of approximately 7.5 mΩ, it minimizes conduction losses, enhancing overall efficiency.
4. Fast Switching: Optimized for quick switching, it improves performance in high-frequency applications.
5. Thermal Performance: The MOSFET features a robust thermal management design, enabling efficient heat dissipation.
6. Package: It comes in an TO-220 package, facilitating easy mounting and heat sink integration.
These characteristics make the STH140N8F7-2 ideal for use in power supplies, motor drives, and DC-DC converters.
Pinout
The STH140N8F7-2 is an N-channel MOSFET manufactured by STMicroelectronics. It features a pin count of 3. The pin configuration typically includes:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. The drain allows current to flow out of the MOSFET when it is turned on.
3. Source (S): This pin is typically connected to the ground or the negative side of the power supply. It serves as the return path for current flowing from the drain.
The STH140N8F7-2 is designed for high-performance applications, providing low on-resistance and high switching speeds, making it suitable for various power management tasks in electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the output pin where the load is connected. The drain allows current to flow out of the MOSFET when it is turned on.
3. Source (S): This pin is typically connected to the ground or the negative side of the power supply. It serves as the return path for current flowing from the drain.
The STH140N8F7-2 is designed for high-performance applications, providing low on-resistance and high switching speeds, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The STH140N8F7-2 is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is headquartered in Geneva, Switzerland, and is known for its broad range of integrated circuits and discrete components. The company specializes in designing and manufacturing devices that serve various sectors, including automotive, industrial, personal electronics, and communication equipment. STMicroelectronics is recognized for its commitment to innovation and sustainability in the semiconductor industry, providing solutions for energy efficiency, connectivity, and smart applications. Their products include microcontrollers, power management devices, sensors, and a variety of semiconductor technologies that cater to both consumer and industrial markets.
Application
The STH140N8F7-2 is an N-channel power MOSFET used in various applications, including:
1. Power Supply: Efficient switching in AC-DC converters and DC-DC converters.
2. Motor Control: Drive circuits for industrial motors and robotics.
3. Automotive: Power management in electric vehicles and hybrid systems.
4. Lighting: LED drivers and dimming applications.
5. Home Appliances: For controlling high-power loads in devices like refrigerators and washing machines.
6. Telecommunications: Power amplifiers and RF applications.
Its high voltage and current ratings make it suitable for demanding power management tasks.
1. Power Supply: Efficient switching in AC-DC converters and DC-DC converters.
2. Motor Control: Drive circuits for industrial motors and robotics.
3. Automotive: Power management in electric vehicles and hybrid systems.
4. Lighting: LED drivers and dimming applications.
5. Home Appliances: For controlling high-power loads in devices like refrigerators and washing machines.
6. Telecommunications: Power amplifiers and RF applications.
Its high voltage and current ratings make it suitable for demanding power management tasks.
Package
The STH140N8F7-2 is typically packaged in a TO-247 package. This package type is known for its robustness and is commonly used for power transistors, facilitating efficient heat dissipation in high-power applications.
