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TP65H050WSQA
+StücklisteGANFET N-CH 650V 36A TO247-3
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HerstellerTransphorm
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Herstellerteil #TP65H050WSQA
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Spezifikationen
| Attribut | Wert |
| Supplier | Transphorm |
| Package / Case | Tube |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 36A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4.8V @ 700µA |
| Gate Charge(Qg)(Max) @ Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1000 pF @ 400 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
