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GANFET N-CH 650V 3.6A 3PQFN
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HerstellerTransphorm
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Herstellerteil #TP65H480G4JSG-TR
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Auf Lager238
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Spezifikationen
| Attribut | Wert |
| Supplier | Transphorm |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 3.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 8V |
| Rds On(Max) @ Id Vgs | 560mOhm @ 3.4A, 8V |
| Vgs(th)(Max) @ Id | 2.8V @ 500µA |
| Gate Charge(Qg)(Max) @ Vgs | 9 nC @ 8 V |
| Vgs(Max) | ±18V |
| Input Capacitance(Ciss)(Max) @ Vds | 760 pF @ 400 V |
| Power Dissipation (Max) | 13.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 3-PQFN (5x6) |
