Abbildungen dienen nur als Referenz
MOSFET 2N-CH 100V 1.6A 8SOIC
-
HerstellerDioden Incorporated
-
Herstellerteil #ZXMN10A08DN8TC
-
Datenblatt ZXMN10A08DN8TC DataSheet
-
Paket SOIC-8
-
Auf Lager8856
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Diodes Incorporated |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A |
| Rds On(Max) @ Id Vgs | 250mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 7.7nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 405pF @ 50V |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
