2N7002E-T1-E3 vs 2N7002V

Dieser detaillierte Vergleich von 2N7002E-T1-E3 und 2N7002V bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E-T1-E3 and 2N7002V are both N-channel enhancement-mode MOSFETs in SOT-23 packages with matched voltage and current ratings, making the 2N7002V a viable functional substitute for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific drive conditions before committing to a drop-in replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
On-Resistance RDS(on) Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002V

Fairchild Halbleiter

Lifecycle
Active
Stock
4358 Stückzahl
Package
SOT-666
Series
Transistoren von FETs, MOSFETs von Arrays
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002V
Supplier - Rochester Electronics, LLC
Part Status Active Active
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V 50pF @ 25V
Power - Max - 250mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
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