2N7002DW vs 2N7002E-T1-E3

Dieser detaillierte Vergleich von 2N7002DW und 2N7002E-T1-E3 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E-T1-E3 are both 60 V logic-level N-channel MOSFETs in SOT-23 packages, making the 2N7002E-T1-E3 a viable functional replacement candidate for the 2N7002DW in single-channel applications. However, the 2N7002DW is a dual-channel device, so designers must account for the difference in channel count and verify that the single MOSFET of the 2N7002E-T1-E3 can satisfy the circuit's switching requirements before substituting.

Channel Count Validation required
Drain-Source Voltage Rating High match
Package Type High match
Continuous Drain Current Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002DW

Onsemi

Lifecycle
Active
Stock
6631 Stückzahl
Series
Transistoren für FETs, MOSFETs für FET, MOSFET Arrays
+Stückliste Anfrage
Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002DW 2N7002E-T1-E3
Part Status Active Active
FET Type - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V 60 V
Current - Continuous Drain(Id) @ 25°C - 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.6 nC @ 4.5 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 21 pF @ 5 V
Power Dissipation (Max) - 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number 2N7002 -
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Current - Continuous Drain (Id) @ 25°C 115mA -
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V -
Vgs(th) (Max) @ Id 2V @ 250µA -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V -
Power - Max 200mW -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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