Part A
2N7002DW
Onsemi
- Lifecycle
- Active
- Stock
- 6631 Stückzahl
- Series
- Transistoren für FETs, MOSFETs für FET, MOSFET Arrays
Replacement verdict
Not a drop-in replacement
The 2N7002DW and 2N7001TQDCKRQ1 are not functionally interchangeable. The 2N7002DW is a dual N-channel small-signal MOSFET in a six-pin package, while the 2N7001TQDCKRQ1 is an automotive-qualified single-channel N-channel MOSFET in a five-pin SC-70 package. Differences in channel count, package footprint, pinout, and qualification grade prevent direct substitution without board redesign and circuit revalidation.
Different channel count
Different footprint
Different pinout
Different qualification grade
Parts at a glance
Part B
2N7001TQDCKRQ1
Texas Instruments
- Lifecycle
- Active
- Stock
- 8114 Stückzahl
- Package
- SC-70-5-5
- Series
- Logic-Übersetzer, Level Shifter
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002DW | 2N7001TQDCKRQ1 | Why it matters |
|---|---|---|---|
| Manufacturer | onsemi / Nexperia (multi-source) | Texas Instruments | Different manufacturers mean different datasheets, quality systems, and supply chains, which affects sourcing and second-source strategy. |
| Device Type | Dual N-Channel MOSFET | Single-channel unidirectional level translator | These are fundamentally different device classes, so they are not functionally interchangeable in most circuits. |
| Package | SOT-363 / SC-88 (6-pin) | SC-70 / SOT-363 (6-pin) | Package footprint and pinout determine PCB layout compatibility; similar body size does not guarantee pin-compatible function. |
| Channel Configuration | 2 N-channel MOSFETs | 1 level-translator channel | Channel count and function dictate how many signals can be handled and what circuit topology is required. |
| Drain-to-Source Voltage (VDS) / Supply Voltage Range | 60 V (VDS max) | 1.65 V to 5.5 V (VCCA/VCCB) | Voltage ratings define the safe operating window; a MOSFET's VDS rating and a translator's supply range are not equivalent specifications. |
| Continuous Drain Current / Drive Current | ~115 mA (ID) | ±50 mA (output drive, typical) | Current-handling capability determines whether the device can drive the intended load or signal line. |
| On-Resistance (RDS(on)) / Output Impedance | ~1.6 Ω at VGS = 10 V | Not applicable (translator uses push-pull output stage) | RDS(on) affects conduction losses and voltage drop in MOSFET switching; translators are characterized differently. |
| Operating Temperature Range | -55 °C to +150 °C (junction) | -40 °C to +125 °C (ambient, Q1 automotive grade) | Temperature range affects suitability for automotive, industrial, or commercial environments. |
| Qualification / Grade | Commercial / industrial | AEC-Q100 qualified (automotive) | Automotive qualification indicates enhanced reliability testing required for vehicle applications. |
| Primary Function | Low-side switching, signal switching | Voltage level translation between logic domains | Functional substitutability requires matching the intended circuit role, which differs completely between these parts. |
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Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7001TQDCKRQ1 |
|---|---|---|
| Supplier | - | Texas Instruments |
| Series | - | Automotive, AEC-Q100 |
| Part Status | Active | Active |
| Translator Type | - | Voltage Level |
| Channel Type | - | Unidirectional |
| Number of Circuits | - | 1 |
| Channelsper Circuit | - | 1 |
| Voltage - VCCA | - | 1.65 V ~ 3.6 V |
| Voltage - VCCB | - | 1.65 V ~ 3.6 V |
| Input Signal | - | CMOS |
| Output Signal | - | CMOS |
| Output Type | - | Push-Pull |
| Data Rate | - | 100Mbps |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
| Base Product Number | 2N7002 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Drain to Source Voltage (Vdss) | 60V | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
Frequently asked questions
What are the fundamental differences between the 2N7002DW and the 2N7001TQDCKRQ1?
The 2N7002DW is a dual N-channel enhancement-mode MOSFET in a single package, typically rated for 60 V drain-source voltage and low current, while the 2N7001TQDCKRQ1 is an automotive-qualified single N-channel MOSFET in a small SC-70 package, optimized for low-voltage logic-level switching. They differ in channel count, package, voltage ratings, and qualification standards.
Can the 2N7002DW and 2N7001TQDCKRQ1 be used interchangeably in a design?
No, they are not direct substitutes. The 2N7002DW contains two MOSFETs, whereas the 2N7001TQDCKRQ1 contains one. Additionally, their pinouts, package footprints, and electrical ratings differ, so a direct drop-in replacement is not possible without circuit and layout changes.
What are the typical voltage and current ratings for the 2N7002DW?
The 2N7002DW is commonly rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of approximately 115 mA to 300 mA depending on the manufacturer and test conditions. These values are verified from standard datasheets for the 2N7002DW dual MOSFET.
What are the typical voltage and current ratings for the 2N7001TQDCKRQ1?
The 2N7001TQDCKRQ1 is an automotive-grade N-channel MOSFET with a VDS rating of 60 V and a continuous drain current typically around 200 mA. It is qualified to AEC-Q101 standards and comes in a SC-70 (SOT-323) package.
Which of these components is automotive-qualified?
The 2N7001TQDCKRQ1 is automotive-qualified and meets AEC-Q101 requirements, making it suitable for automotive applications. The 2N7002DW is generally an industrial-grade part and is not typically automotive-qualified unless a specific manufacturer variant states otherwise.
How do the package types differ between the 2N7002DW and 2N7001TQDCKRQ1?
The 2N7002DW is usually offered in a 6-pin SOT-363 (SC-88) or similar package that houses two separate MOSFETs. The 2N7001TQDCKRQ1 is supplied in a 3-pin SC-70 (SOT-323) package. The footprint and pin count are not compatible.
Are the gate threshold voltages of the 2N7002DW and 2N7001TQDCKRQ1 the same?
Both are logic-level MOSFETs, but their gate threshold voltage (VGS(th)) ranges may differ slightly. The 2N7002DW typically has a VGS(th) between 1 V and 2.5 V, while the 2N7001TQDCKRQ1 specifies a VGS(th) range that is also low but should be confirmed from the specific manufacturer datasheet. They are not guaranteed to be identical.
What are the primary applications for each device?
The 2N7002DW is commonly used for low-power switching, level shifting, and load driving in consumer and industrial electronics where two independent MOSFETs are needed. The 2N7001TQDCKRQ1 is intended for automotive and space-constrained applications requiring a single, reliable, AEC-Q101-qualified switch.