2N7002DW
Onsemi
- Lifecycle
- Active
- Stock
- 6631 Stückzahl
- Series
- Transistoren für FETs, MOSFETs für FET, MOSFET Arrays
Dieser detaillierte Vergleich von 2N7002DW und 2N7002CK bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002DW and 2N7002CK are both dual N-channel enhancement-mode MOSFETs sharing the same 60 V VDS rating, 2N7002-class threshold and RDS(on) characteristics, and SOT-363 surface-mount footprint, making the 2N7002CK a viable functional substitute for the 2N7002DW in most low-power switching and level-shifting applications. Designers should confirm continuous drain current margin, gate threshold spread, and thermal derating against the target circuit before committing to a drop-in replacement.
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Use manufacturer datasheets as the final authority.
| Specification | 2N7002DW | 2N7002CK |
|---|---|---|
| Part Status | Active | Active |
| Base Product Number | 2N7002 | - |
| Technology | MOSFET (Metal Oxide) | - |
| Configuration | 2 N-Channel (Dual) | - |
| FET Feature | Logic Level Gate | - |
| Drain to Source Voltage (Vdss) | 60V | - |
| Current - Continuous Drain (Id) @ 25°C | 115mA | - |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | - |
| Power - Max | 200mW | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |