2N7002E vs 2N7002DW

Dieser detaillierte Vergleich von 2N7002E und 2N7002DW bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002DW and 2N7002E are both 60 V logic-level N-channel MOSFETs sharing the same SOT-363 (SC-88) package and similar RDS(on) characteristics, making the 2N7002DW a viable functional replacement candidate for the 2N7002E in most low-power switching applications. However, the 2N7002DW integrates two electrically isolated MOSFETs in a single package, whereas the 2N7002E is a single-device part, so designers must account for the dual-channel configuration and verify continuous current and thermal derating against the target circuit requirements before substituting.

Channel Configuration High match
Package Type High match
Continuous Drain Current Validation required
Drain-Source Voltage Validation required

Parts at a glance

Part A

2N7002E

Elektronische Komponenten von Panasonic

Lifecycle
Active
Stock
3552 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
Part B

2N7002DW

Onsemi

Lifecycle
Active
Stock
6631 Stückzahl
Series
Transistoren für FETs, MOSFETs für FET, MOSFET Arrays

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002DW
Part Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - 2N7002
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Current - Continuous Drain (Id) @ 25°C - 115mA
Rds On (Max) @ Id, Vgs - 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id - 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds - 50pF @ 25V
Power - Max - 200mW
Packaging - Cut Tape (CT), Tape & Reel (TR)