2N7002CK vs 2N7002LT1G

Dieser detaillierte Vergleich von 2N7002CK und 2N7002LT1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002LT1G and 2N7002CK are functionally compatible N-channel small-signal MOSFETs in SOT-23 packages, sharing matched voltage ratings, current handling, and RDS(on) characteristics. Designers may consider the 2N7002CK as a viable alternative to the 2N7002LT1G for most low-power switching applications, subject to final validation of gate threshold and thermal margins in the target circuit.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Gate Threshold Voltage Validation required

Parts at a glance

Part A

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
Part B

2N7002LT1G

Onsemi

Lifecycle
Active
Stock
7047 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002CK 2N7002LT1G
Part Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V
Current - Continuous Drain(Id) @ 25°C - 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) - 5V, 10V
Rds On(Max) @ Id Vgs - 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id - 2.5V @ 250µA
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 50 pF @ 25 V
Power Dissipation (Max) - 225mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount