2N7002E-T1-E3 vs 2N7002CK

Dieser detaillierte Vergleich von 2N7002E-T1-E3 und 2N7002CK bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002CK and 2N7002E-T1-E3 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional replacement candidate for the 2N7002E-T1-E3 in most low-power switching applications. Designers should verify gate threshold voltage tolerances and RDS(on) characteristics against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance RDS(on) Validation required
Package Type High match

Review the critical differences →

Parts at a glance

Part A

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E-T1-E3 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 240mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Rds On(Max) @ Id Vgs 3Ohm @ 250mA, 10V -
Vgs(th)(Max) @ Id 2.5V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 0.6 nC @ 4.5 V -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 21 pF @ 5 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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