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2SK1317-E
+StücklisteMOSFET N-CH 1500V 2.5A TO3P
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HerstellerRenesas Electronics America Inc.
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Herstellerteil #2SK1317-E
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Paket TO-3P-3
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Auf Lager6282
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1500 V |
| Current - Continuous Drain(Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 12Ohm @ 2A, 15V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 990 pF @ 10 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
Übersicht
Description
The 2SK1317-E is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Manufactured by Renesas Electronics, this component is known for its efficiency and reliability. The 2SK1317-E features a high breakdown voltage and low on-resistance, making it suitable for power management in electronic devices. It is commonly used in applications such as power supplies, motor drives, and DC-DC converters.
The MOSFET has a maximum drain-source voltage (V_DS) of around 900V and a drain current (I_D) capability of approximately 4A. It is packaged in a TO-220 or similar form, facilitating easy mounting and heat dissipation. The 2SK1317-E enables efficient switching operations due to its fast response time and low gate charge, which contributes to reducing power loss.
Overall, the 2SK1317-E is valued for its robustness and performance in handling high-voltage and high-current demands in various electronic circuits.
The MOSFET has a maximum drain-source voltage (V_DS) of around 900V and a drain current (I_D) capability of approximately 4A. It is packaged in a TO-220 or similar form, facilitating easy mounting and heat dissipation. The 2SK1317-E enables efficient switching operations due to its fast response time and low gate charge, which contributes to reducing power loss.
Overall, the 2SK1317-E is valued for its robustness and performance in handling high-voltage and high-current demands in various electronic circuits.
Equivalent
The 2SK1317-E is a MOSFET transistor commonly used for switching applications. Equivalent products include the 2SK1317, 2SK2317, and similar N-channel MOSFETs with comparable voltage and current ratings, such as the IRF530 or IRF540depending on the specific electrical parameters required for your application. It's important to verify the specifications like maximum drain-source voltage, continuous drain current, and gate threshold voltage when selecting an equivalent. Always refer to the datasheets for precise compatibility.
Features
The 2SK1317-E is an N-channel MOSFET transistor primarily used for switching and amplification in electronic circuits. Key features include:
1. Voltage and Current Ratings: It typically handles moderate levels of current and voltage, suitable for various applications in consumer electronics and industrial devices.
2. Low On-Resistance: The device offers low on-resistance, improving efficiency by minimizing power loss during operation.
3. Fast Switching Speed: The MOSFET is designed for rapid switching, enhancing performance in high-speed switching applications.
4. Enhanced Thermal Stability: It generally includes features that provide good thermal performance, allowing for reliable operation under varying temperature conditions.
5. Compact Package: The 2SK1317-E is often available in a compact package, making it suitable for designs where space is a constraint.
6. High Reliability: Built to ensure durability and long-term performance, it is often utilized in applications demanding consistent reliability.
These features make the 2SK1317-E a versatile component in power management, motor control, and other applications requiring efficient electronic switching.
1. Voltage and Current Ratings: It typically handles moderate levels of current and voltage, suitable for various applications in consumer electronics and industrial devices.
2. Low On-Resistance: The device offers low on-resistance, improving efficiency by minimizing power loss during operation.
3. Fast Switching Speed: The MOSFET is designed for rapid switching, enhancing performance in high-speed switching applications.
4. Enhanced Thermal Stability: It generally includes features that provide good thermal performance, allowing for reliable operation under varying temperature conditions.
5. Compact Package: The 2SK1317-E is often available in a compact package, making it suitable for designs where space is a constraint.
6. High Reliability: Built to ensure durability and long-term performance, it is often utilized in applications demanding consistent reliability.
These features make the 2SK1317-E a versatile component in power management, motor control, and other applications requiring efficient electronic switching.
Pinout
The 2SK1317-E is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) typically used for switching and amplification purposes in electronic circuits. It has a 3-pin configuration which is standard for most discrete MOSFETs.
The pin functions are as follows:
1. Gate (G): This is the control pin that regulates the flow of current between the drain and source. A voltage applied to the gate determines whether the transistor is in an 'on' or 'off' state.
2. Drain (D): This is the pin through which the main current flows when the transistor is in the 'on' state. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current enters the MOSFET before flowing out of the drain.
These pins allow the 2SK1317-E to effectively function in various electronic applications, including power management and signal processing.
The pin functions are as follows:
1. Gate (G): This is the control pin that regulates the flow of current between the drain and source. A voltage applied to the gate determines whether the transistor is in an 'on' or 'off' state.
2. Drain (D): This is the pin through which the main current flows when the transistor is in the 'on' state. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal through which the current enters the MOSFET before flowing out of the drain.
These pins allow the 2SK1317-E to effectively function in various electronic applications, including power management and signal processing.
Manufacturer
The 2SK1317-E is a transistor manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that designs and produces a wide range of microcontrollers, microprocessors, and other semiconductor devices. It is one of the largest semiconductor manufacturers in the world and focuses on providing solutions for the automotive, industrial, home electronics, and information communication technology sectors.
Application
The 2SK1317-E is an N-channel MOSFET typically used in applications demanding high-speed switching and efficient power management. Its primary application areas include:
1. Switching Power Supplies: Used for efficient power conversion and regulation.
2. Motor Control: Suitable for driving motors in various industrial and consumer applications.
3. Inverter Systems: Utilized in inverters for converting DC to AC power.
4. Amplifiers: Implemented in audio and RF amplifier circuits for its high-speed characteristics.
5. Battery Management: Used in battery protection and charging circuits.
These areas leverage the MOSFET's capabilities in handling voltage and current efficiently while maintaining reliability.
1. Switching Power Supplies: Used for efficient power conversion and regulation.
2. Motor Control: Suitable for driving motors in various industrial and consumer applications.
3. Inverter Systems: Utilized in inverters for converting DC to AC power.
4. Amplifiers: Implemented in audio and RF amplifier circuits for its high-speed characteristics.
5. Battery Management: Used in battery protection and charging circuits.
These areas leverage the MOSFET's capabilities in handling voltage and current efficiently while maintaining reliability.
Package
The 2SK1317-E is a N-channel MOSFET transistor typically packaged in a TO-220 type case.
