Abbildungen dienen nur als Referenz
2SK2225-E
+StücklisteMOSFET N-CH 1500V 2A TO3PFM
-
HerstellerRenesas Electronics America Inc.
-
Herstellerteil #2SK2225-E
-
Paket TO-3PFM-3
-
Auf Lager6667
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1500 V |
| Current - Continuous Drain(Id) @ 25°C | 2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 12Ohm @ 1A, 15V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 984.7 pF @ 30 V |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
Übersicht
Description
The 2SK2225-E is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It is commonly used in amplification and switching circuits due to its efficient performance characteristics. The key features of the 2SK2225-E include a high drain current capacity, low on-state resistance, and fast switching speed, making it suitable for power management tasks in electronic devices.
This MOSFET is often utilized in power supplies, motor controllers, and as a component in circuits requiring efficient power conversion. The device operates at a relatively high voltage, making it versatile for multiple applications. The TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance and reliability.
In summary, the 2SK2225-E is valued for its robustness, efficiency, and adaptability in handling high-power applications, making it a staple in the design of efficient electronic systems.
This MOSFET is often utilized in power supplies, motor controllers, and as a component in circuits requiring efficient power conversion. The device operates at a relatively high voltage, making it versatile for multiple applications. The TO-220 package allows for efficient heat dissipation, which is crucial for maintaining performance and reliability.
In summary, the 2SK2225-E is valued for its robustness, efficiency, and adaptability in handling high-power applications, making it a staple in the design of efficient electronic systems.
Equivalent
The 2SK2225-E is a N-channel MOSFET. Equivalent products with similar specifications might include:
- IRF530
- IRF540
- 2SK3564
- 2SK3566
However, it's essential to compare the datasheets for specific parameters such as voltage, current, and on-resistance to ensure compatibility with your application.
- IRF530
- IRF540
- 2SK3564
- 2SK3566
However, it's essential to compare the datasheets for specific parameters such as voltage, current, and on-resistance to ensure compatibility with your application.
Features
The 2SK2225-E is an N-channel MOSFET semiconductor device often utilized in electronic circuits for switching and amplification purposes. Key features include:
1. Low On-Resistance: This ensures efficient current flow with minimal power loss, making it suitable for power applications.
2. High-Speed Switching: The device can rapidly turn on and off, which is essential for applications requiring quick response times.
3. High Voltage Tolerance: It can handle considerable voltage levels, making it versatile for various power supply circuits.
4. Enhancement Mode: This means the MOSFET requires a positive gate-to-source voltage to conduct, which helps in reducing power consumption when the device is in the off state.
5. Compact Package: Typically available in space-efficient packaging, making it suitable for compact circuit designs.
These features make the 2SK2225-E a reliable choice for applications such as power regulators, motor drivers, and other switching devices in consumer electronics and industrial equipment.
1. Low On-Resistance: This ensures efficient current flow with minimal power loss, making it suitable for power applications.
2. High-Speed Switching: The device can rapidly turn on and off, which is essential for applications requiring quick response times.
3. High Voltage Tolerance: It can handle considerable voltage levels, making it versatile for various power supply circuits.
4. Enhancement Mode: This means the MOSFET requires a positive gate-to-source voltage to conduct, which helps in reducing power consumption when the device is in the off state.
5. Compact Package: Typically available in space-efficient packaging, making it suitable for compact circuit designs.
These features make the 2SK2225-E a reliable choice for applications such as power regulators, motor drivers, and other switching devices in consumer electronics and industrial equipment.
Pinout
The 2SK2225-E is a N-channel MOSFET transistor. It typically has a 3-pin configuration which includes:
1. Gate (G): This pin is responsible for activating the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the current flows out of the transistor.
3. Source (S): The current enters the transistor through this pin.
This MOSFET is used in various applications like power management, switching, and amplification in electronic circuits due to its ability to handle high voltage and current efficiently. Always consult the specific datasheet of the component to verify the pin configuration and electrical characteristics, as these can vary slightly depending on the manufacturer.
1. Gate (G): This pin is responsible for activating the MOSFET. Applying voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the pin where the current flows out of the transistor.
3. Source (S): The current enters the transistor through this pin.
This MOSFET is used in various applications like power management, switching, and amplification in electronic circuits due to its ability to handle high voltage and current efficiently. Always consult the specific datasheet of the component to verify the pin configuration and electrical characteristics, as these can vary slightly depending on the manufacturer.
Manufacturer
The 2SK2225-E is manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that specializes in the design and production of microcontrollers, system-on-chip (SoC) solutions, and a range of other semiconductor devices. The company is known for providing comprehensive semiconductor solutions for various applications, including automotive, industrial, home electronics, and information communication technology. Renesas aims to deliver innovations that enhance people's work and daily lives by integrating its extensive expertise in microcontrollers and analog and power devices.
Application
The 2SK2225-E is a high-speed, low-on-resistance N-channel MOSFET commonly used in various applications. Key areas include power management systems, where efficient switching is crucial. It is often employed in DC-DC converters, power supply circuits, and load switch applications due to its ability to handle high currents and voltages efficiently. Additionally, it's suitable for use in motor control circuits, automotive electronics, and consumer electronics where high efficiency and reliability are required. Its fast switching speed also makes it ideal for RF amplification and other high-frequency applications.
Package
The 2SK2225-E is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that typically comes in a TO-220 package. This package type is designed for easy mounting and efficient thermal performance.
