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MOSFET N-CH 100V 190MA SOT23-3
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HerstellerInfineon-Technologien
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Herstellerteil #BSS123NH6327XTSA1
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Datenblatt BSS123NH6327XTSA1 DataSheet
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Paket PG-SOT23-3
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 190mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 6Ohm @ 190mA, 10V |
| Vgs(th)(Max) @ Id | 1.8V @ 13µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.9 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 20.9 pF @ 25 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23 |
Übersicht
Description
- 30V drain-source voltage (VDS)
- 170mA continuous drain current (ID)
- Low on-resistance (RDS(on)) of 6Ω max at 4.5V gate drive.
- SOT-23 package, ideal for space-constrained designs.
Common uses include load switching, power management, and signal amplification in portable electronics, IoT devices, and battery-powered systems. Its low threshold voltage (VGS(th)) ensures compatibility with logic-level signals (e.g., 3.3V/5V microcontrollers).
For detailed specs, refer to the Infineon datasheet.
Equivalent
- DMN1019USN-7 (Diodes Inc)
- 2N7002DW (On Semiconductor)
- BS170 (Fairchild/ONSemi)
- NDS7002A (ON Semiconductor)
Check datasheets for exact specs like voltage, current, and package (SOT-23).
Features
- Voltage Rating: 100V (Drain-Source, V_DS)
- Current Rating: 170mA (Continuous Drain Current, I_D)
- Low On-Resistance: 6.5Ω (R_DS(on) at V_GS = 10V)
- Gate Threshold Voltage: 1.5V (V_GS(th))
- Low Power Dissipation: 250mW
- Fast Switching Speed
- SOT-23 Package (Compact & surface-mountable)
Ideal for low-power switching applications, signal amplification, and load control in portable electronics.
Pinout
Pin Functions:
1. Gate (G): Controls the switching.
2. Drain (D): Connects to the load (high-side).
3. Source (S): Ground/reference.
Key Features:
- 30V drain-source voltage.
- 170mA continuous drain current.
- Low threshold voltage for logic-level control.
Used in switching, amplification, and power management circuits.
Manufacturer
The part is a N-channel MOSFET from Infineon’s OptiMOS™ series, designed for efficient power management in compact applications.
