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IRLML2060TRPBF
+StücklisteMOSFET N-CH 60V 1.2A SOT23
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HerstellerInfineon-Technologien
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Herstellerteil #IRLML2060TRPBF
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Datenblatt IRLML2060TRPBF DataSheet
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Paket SOT-23-3
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Auf Lager3852
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 1.2A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 480mOhm @ 1.2A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 25µA |
| GateCharge(Qg)(Max)@Vgs | 0.67 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 64 pF @ 25 V |
| PowerDissipation(Max) | 1.25W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | Micro3™/SOT-23 |
Übersicht
Description
- 30V drain-source voltage (VDS)
- 3.7A continuous drain current (ID)
- Low on-resistance (RDS(on)) of 45mΩ at 4.5V gate drive
- Logic-level gate threshold (VGS(th)) for easy drive with 3V/5V microcontrollers
- Compact SOT-23 package, ideal for space-constrained designs
Common uses include power management, load switching, and DC-DC converters in portable electronics, IoT devices, and battery-powered systems. Its low gate charge ensures fast switching with minimal losses.
For detailed specs, refer to the datasheet on Infineon’s website.
Equivalent
- DMN1019USN-7 (Diodes Inc.)
- SI2301DS (Vishay)
- 2N7002DW (ON Semiconductor)
- BSS138 (NXP/Infineon) – lower current (0.22A) but similar package/voltage.
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in performance.
Features
- Voltage Rating: 60V (Drain-Source, VDSS)
- Current Rating: 3.7A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (at VGS = 10V)
- Gate Threshold Voltage: 1V (min) to 2.35V (max)
- Fast Switching: Low gate charge (Qg = 8.3nC)
- Power Dissipation: 1.3W (TA = 25°C)
- Package: SOT-23 (Compact surface-mount)
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Applications: Power management, DC-DC converters, load switching
This MOSFET is optimized for high efficiency and space-constrained designs.
Pinout
1. Gate (G) – Controls the switching.
2. Drain (D) – Connects to the load.
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 3.7A Continuous Drain Current (ID)
- Low On-Resistance (RDS(on) = 45mΩ @ 4.5V VGS)
- Logic-Level Gate Drive (VGS(th) ~1V)
Commonly used in power switching, DC-DC converters, and load control in portable electronics.
Manufacturer
The IRLML2060TRPBF is a N-channel MOSFET designed for low-voltage, high-efficiency applications like power management and switching circuits.
Application
1. Power Management – DC-DC converters, voltage regulators.
2. Load Switching – Battery protection, power distribution.
3. Portable Devices – Smartphones, tablets (low-power applications).
4. Motor Control – Small brushed DC motors.
5. LED Drivers – Backlight control in displays.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, efficient power switching.
