FDG6321C

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FDG6321C

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MOSFET N/P-CH 25V 500/410MA SC88

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Attribut Wert
Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 25V
Current-ContinuousDrain(Id)@25°C 500mA, 410mA
RdsOn(Max)@IdVgs 450mOhm @ 500mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.3nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 50pF @ 10V
Power-Max 300mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

FDG6321C appears to be a course code, likely associated with a specific subject or field of study at a college or university. While I don't have specific details about this course, codes like FDG6321C generally suggest a detailed and specialized course, potentially at an advanced undergraduate or graduate level.
To understand what FDG6321C covers, you would typically consult the course catalog or syllabus provided by the educational institution offering it. The course could cover a wide range of topics depending on the department it belongs to—be it finance, digital graphics, engineering, or another discipline. The number sequence (6321) often indicates a specific level or sequence within a department's offerings, with 'C' potentially denoting a specific section or version of the course.
For detailed information, contact the academic department directly or check the institution's website where the course is listed. This will provide insights into the course objectives, prerequisites, structure, and content.

Equivalent

The FDG6321C is a dual N & P-channel MOSFET. Some possible equivalent products include the DMG1012T from Diodes Incorporated, the SI4993ADY from Vishay, and the FDC6321C from ON Semiconductor. When selecting an equivalent, ensure it matches the original specifications such as voltage, current ratings, and package type to ensure compatibility with your application.

Features

The FDG6321C is a dual N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Dual N-Channel Configuration: Allows for compact design and efficient use in switching applications.
2. Low On-Resistance: Minimizes power loss, enhancing overall efficiency.
3. Low Gate Charge: Reduces drive requirements, making it suitable for low-power applications.
4. High-Speed Switching: Provides fast transition speeds, beneficial for switching power supplies and other rapid-switch applications.
5. SOT-23 Package: Compact and suitable for space-constrained designs.
6. Robust Thermal Performance: Ensures reliability under various operating conditions.
7. Applications: Ideal for load switching, DC-DC converters, and battery management systems.
These features make the FDG6321C a versatile component for designers aiming to optimize power efficiency and performance in electronic devices.

Pinout

The FDG6321C is a dual N-Channel MOSFET, which is typically used for load switching applications. It comes in a 6-pin SuperSOT-6 package. The pin functions are as follows:
1. Pin 1 (G1): Gate of the first (Q1) N-Channel MOSFET.
2. Pin 2 (S1): Source of the first (Q1) N-Channel MOSFET.
3. Pin 3 (S2): Source of the second (Q2) N-Channel MOSFET.
4. Pin 4 (G2): Gate of the second (Q2) N-Channel MOSFET.
5. Pin 5 (D2): Drain of the second (Q2) N-Channel MOSFET.
6. Pin 6 (D1): Drain of the first (Q1) N-Channel MOSFET.
These MOSFETs are typically utilized in power management applications, where low on-state resistance and fast switching are required.

Manufacturer

The FDG6321C is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor is a prominent player in the electronics industry, providing innovative solutions for energy-efficient electronics, including power and signal management, logic, discrete, and custom devices. Their products are utilized in various applications across different sectors such as automotive, industrial, cloud power, and the Internet of Things (IoT). The company focuses on developing technologies that help reduce global energy use and are committed to sustainability and efficiency in their operations.

Application

The FDG6321C is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in applications requiring efficient power management and switching. Its primary application areas include DC-DC converters, load switches, and power management systems in consumer electronics, computing, and telecommunications. It is also utilized in battery-powered devices due to its low on-resistance and fast switching capabilities, which help minimize power loss and improve energy efficiency. Additionally, it is suitable for motor control, LED drivers, and other applications requiring reliable performance in compact spaces.

Package

The FDG6321C is a dual N-channel MOSFET typically available in a SuperSOT-6 package. This package type is compact, making it suitable for applications requiring efficient space utilization on a printed circuit board (PCB).

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