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H5TQ4G63CFR-RDC
+Stückliste4Gbit 1.425V~1.575V 800MHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS
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HerstellerHYNIX
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Herstellerteil #H5TQ4G63CFR-RDC
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Datenblatt H5TQ4G63CFR-RDC DataSheet
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Auf Lager7815
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Spezifikationen
| Attribut | Wert |
| Packaging | FBGA-96 |
| Clock Frequency | 800MHz |
| Memory Format | DDR3 SDRAM |
| Memory Size | 4Gbit |
| Operating Temperature | -40℃~+95℃ |
| Refresh Current | 10mA |
| Voltage - Supply | 1.425V~1.575V |
Übersicht
Description
- Density & Organization: 4Gb (512M x 8)
- Speed: Up to 1866 Mbps (DDR3-1866)
- Voltage: 1.5V (standard DDR3)
- Package: 96-ball FBGA (Fine-pitch Ball Grid Array)
- Refresh: 8192 cycles/64ms (self-refresh supported)
- Applications: Consumer electronics, networking, industrial systems.
It supports auto-precharge, burst lengths of 8, and CAS latencies (CL) from 9 to 13. The "-RDC" suffix may indicate specific timing or industrial-grade reliability.
For exact specs, refer to the SK Hynix datasheet.
Equivalent
- Micron: MT41K512M4DA-107 (4Gb DDR3)
- Samsung: K4B4G1646E-BCMA (4Gb DDR3)
- Nanya: NT5CC256M16DP-DI (4Gb DDR3)
Ensure compatibility with voltage (1.5V/1.35V), speed (e.g., 1600MHz), and pin configuration before substitution.
Features
- Density & Organization: 4Gb (512M × 8)
- Speed: 1866 Mbps (DDR3L-1866)
- Voltage: 1.35V (Low Power, DDR3L-compatible)
- Package: 96-ball FBGA
- Timings: CL=13, tRCD=13, tRP=13
- Refresh: 8192 cycles/64ms
- Operating Temp: Commercial (0°C to 95°C)
- Features: On-Die Termination (ODT), Auto Self-Refresh (ASR), Programmable CAS Latency
Designed for low-power applications, it supports high-speed data transfer in devices like embedded systems, networking, and consumer electronics.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 8-bit data bus (DQ0-DQ7)
- DDR3 interface (1.5V operation)
- On-Die Termination (ODT)
- Programmable CAS Latency (CL)
- Auto Refresh & Self Refresh modes
- A0-A14 address inputs
- Bank address (BA0-BA2)
- Differential clock (CK, CK#)
Used in consumer electronics, networking, and embedded systems requiring high-speed memory.
Application
- Consumer Electronics: Smart TVs, set-top boxes, and gaming consoles.
- Networking: Routers, switches, and communication equipment.
- Embedded Systems: Industrial PCs, automation, and IoT devices.
- Computing: Laptops, tablets, and low-power servers.
Its DDR3L (1.35V) low-voltage operation makes it suitable for energy-efficient designs.
Package
Frequently Asked Questions
Q: Is the H5TQ4G63CFR-RDC compatible with standard DDR3-1600 interfaces?
A: Yes, it operates at 800MHz clock frequency (DDR3-1600 data rate) and complies with JEDEC DDR3 standards.
Q: What is the memory density and organization of this component?
A: It offers 4Gbit density, typically organized as 512M x 8 bits per chip.
Q: Can this chip operate in industrial temperature environments?
A: Yes, it supports an operating temperature range of -40°C to +95°C, suitable for industrial applications.
Q: What is the supply voltage requirement for this DDR3 SDRAM?
A: It requires a VDD supply between 1.425V and 1.575V, standard for DDR3 memory.
Q: Does the 4Gbit memory use a single-chip or multi-die package?
A: Based on the FBGA-96 package and part number, it is a monolithic 4Gb DDR3 die, not a stacked multi-die package.
Q: What is the typical refresh current consumption for this chip?
A: The typical refresh current (IDD5) is 10mA, indicating moderate auto-refresh power draw.
Q: Is this component suitable for high-speed data logging or networking equipment?
A: Yes, with 800MHz clock speed and industrial temp range, it is ideal for routers, base stations, and industrial controllers.
