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H5TQ4G63EFR-RDC
+Stückliste4Gbit 1.425V~1.575V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS
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HerstellerHYNIX
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Herstellerteil #H5TQ4G63EFR-RDC
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Datenblatt H5TQ4G63EFR-RDC DataSheet
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Auf Lager25298
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Spezifikationen
| Attribut | Wert |
| Packaging | FBGA-96 |
| Clock Frequency | 1.066GHz |
| Memory Format | DDR3 SDRAM |
| Memory Size | 4Gbit |
| Operating Temperature | 0℃~+95℃ |
| Voltage - Supply | 1.425V~1.575V |
Übersicht
Description
- Density & Organization: 4Gb (512M x 8)
- Voltage: 1.35V (DDR3L, compatible with 1.5V)
- Speed: 1866 Mbps (supports 800–1866 MHz clock rates)
- Package: 78-ball FBGA (small form factor)
- Refresh: Auto-refresh & self-refresh modes
- Applications: Embedded systems, IoT, mobile devices, and consumer electronics.
It offers low power consumption, high-speed data transfer, and reliability, making it suitable for energy-efficient designs. For detailed specs, refer to the official SK Hynix datasheet.
Features
- Capacity: 4Gb (512M x 8)
- Voltage: Low-power DDR3L (1.35V ±0.067V, compatible with 1.5V)
- Speed: 1866 Mbps (PC3L-14900)
- Organization: 8 internal banks, 16-bit prefetch
- Timings: CL=13, tRCD=13, tRP=13
- Package: 96-ball FBGA (8mm x 10mm)
- Refresh: 64ms refresh interval (8K refresh cycles)
- Operating Temp: Commercial (0°C to 95°C)
- Features: On-die termination (ODT), auto self-refresh (ASR), and programmable driver strength
Designed for power efficiency and high-speed applications, it’s commonly used in embedded systems, networking, and consumer electronics.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Voltage: 1.35V (DDR3L), compatible with 1.5V.
- Speed: 1866 Mbps (supports lower speeds).
- Organization: 4Gbit (256M x16).
- Features: On-Die Termination (ODT), Programmable CAS Latency (CL), and Auto Refresh/Self Refresh.
It is commonly used in embedded systems, networking, and consumer electronics.
Manufacturer
SK Hynix is a major global producer of memory chips, specializing in DRAM, NAND flash, and other semiconductor solutions. It is one of the largest memory suppliers worldwide, competing with companies like Samsung and Micron. The company supplies components for various applications, including consumer electronics, servers, and automotive systems.
The H5TQ4G63EFR-RDC is commonly used in embedded systems, networking devices, and industrial applications.
Application
- Consumer Electronics: Smart TVs, set-top boxes, gaming consoles.
- Networking Equipment: Routers, switches, modems.
- Industrial Systems: Embedded computing, automation controllers.
- Automotive Infotainment: In-vehicle displays and navigation systems.
- IoT Devices: Smart home hubs, wearables.
It offers high-speed data transfer (up to 1866 Mbps) and low power consumption, making it suitable for performance-sensitive and power-efficient applications.
Package
Frequently Asked Questions
Q: What is the memory density and organization of the H5TQ4G63EFR-RDC?
A: It is a 4Gbit DDR3 SDRAM, typically organized as 512M x8, suitable for high-density memory applications.
Q: What is the maximum operating clock frequency supported by this component?
A: It supports a maximum clock frequency of 1.066GHz, corresponding to DDR3-2133 data rate for high-speed data transfer.
Q: What is the operating temperature range for this DRAM?
A: It operates within an industrial temperature range of 0°C to +95°C, ensuring reliability in typical embedded and computing environments.
Q: What voltage supply does the H5TQ4G63EFR-RDC require?
A: It requires a VDD supply voltage between 1.425V and 1.575V, standard for DDR3L or low-voltage DDR3 applications.
Q: Is this component compatible with standard FBGA-96 PCB layouts?
A: Yes, it is packaged in an FBGA-96 (Fine-pitch Ball Grid Array) package, compliant with JEDEC standards for easy assembly.
Q: Can this memory be used in high-temperature server or industrial applications?
A: Yes, with a 0°C to +95°C operating range, it is suitable for industrial and server environments that require robust thermal performance.