HAT1091C-EL-E

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HAT1091C-EL-E

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HAT1091C-EL-E - SILICON P CHANNE

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  • Herstellerteil #HAT1091C-EL-E

  • Auf Lager8044

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 1.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4V
Rds On(Max) @ Id Vgs 175mOhm @ 800mA, 4.5V
Vgs(th)(Max) @ Id 1.4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 2.6 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 200 pF @ 10 V
Power Dissipation (Max) 830mW (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 6-CMFPAK

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