RJL5014DPP-E0#T2

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RJL5014DPP-E0#T2

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RJL5014DPP-E0#T2 - SILICON N CHA

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Spezifikationen

Attribut Wert
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 19A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 400mOhm @ 9.5A, 10V
Vgs(th)(Max) @ Id 4V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 43 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C
Mounting Type Through Hole
Supplier Device Package TO-220FP

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