Abbildungen dienen nur als Referenz
IGZ100N65 - DISCRETE IGBT WITHOU
-
HerstellerInfineon-Technologien
-
Herstellerteil #IGZ100N65H5
-
Datenblatt IGZ100N65H5 DataSheet
-
Paket TO-247-4
-
Auf Lager8537
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 650 V |
| Current - Collector(Ic)(Max) | 161 A |
| Current - Collector Pulsed(Icm) | 400 A |
| Vce(on)(Max) @ Vge Ic | 2.1V @ 15V, 100A |
| Power - Max | 536 W |
| Switching Energy | 850µJ (on), 770µJ (off) |
| Input Type | Standard |
| Gate Charge | 210 nC |
| Td(on / off) @ 25°C | 30ns/421ns |
| Test Condition | 400V, 50A, 8Ohm, 15V |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
