Abbildungen dienen nur als Referenz
IRFPS37N50A
+StücklisteMOSFET N-CH 500V 36A SUPER247
-
HerstellerVishay Siliconix
-
Herstellerteil #IRFPS37N50A
-
Auf Lager7356
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | IRFPS37 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5579 pF @ 25 V |
| Power Dissipation (Max) | 446W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | SUPER-247™ (TO-274AA) |
| Package / Case | TO-274AA |
| Packaging | Tube |
Übersicht
Description
- Low On-Resistance (RDS(on)): Typically 0.085Ω, reducing conduction losses.
- High Current Handling: Supports up to 37A continuous drain current.
- Fast Switching: Optimized for efficiency in SMPS, motor drives, and inverters.
- Avalanche Rated: Enhances reliability in rugged conditions.
- TO-247 Package: Ensures good thermal performance.
Ideal for industrial, automotive, and power supply systems, it balances performance and robustness. Always refer to the datasheet for detailed specs and application guidelines.
Equivalent
- IRFP450 (500V, 14A, higher RDS(on))
- IRFP460 (500V, 20A)
- STP36N50DM2 (500V, 36A, STMicroelectronics)
- FDPF36N50 (500V, 36A, Fairchild/ON Semi)
- IXFH36N50 (500V, 36A, IXYS)
Check datasheets for exact specs and pin compatibility.
Features
- Voltage Rating: 500V (VDSS)
- Current Rating: 37A (ID at 25°C)
- Low On-Resistance (RDS(on)): 0.11Ω (max) @ VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Avalanche Energy Rated: Robust against inductive spikes
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- TO-247 Package: High-power handling and thermal performance
Ideal for switching power supplies, motor drives, and inverters.
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage for the IRFPS37N50A?
A: The IRFPS37N50A has a maximum drain-to-source voltage (Vdss) of 500V, suitable for high-voltage switching applications.
Q: Can this MOSFET handle continuous currents above 30A?
A: Yes, it supports a continuous drain current (Id) of 36A at 25°C case temperature, with a low on-resistance of 130mOhm.
Q: What gate drive voltage is recommended for minimal Rds(on)?
A: A gate drive voltage of 10V is required to achieve the specified maximum Rds(on) of 130mOhm at 22A drain current.
Q: How much power can the IRFPS37N50A dissipate?
A: The maximum power dissipation is 446W at case temperature (Tc), making it ideal for high-power switching circuits.
Q: What is the operating temperature range of this device?
A: It operates reliably from -55°C to +150°C junction temperature, suitable for harsh environments.
Q: Is this component available in surface-mount or through-hole package?
A: It comes in a through-hole SUPER-247™ (TO-274AA) package, supplied in tubes for easy handling.
Q: What is the typical gate charge and input capacitance?
A: The maximum gate charge is 180nC at 10V, and input capacitance (Ciss) is 5579pF at 25V, aiding switching loss estimation.
