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IRG4PC50UDPBF
+StücklisteIGBT 600V 55A 200W TO247AC
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HerstellerInfineon-Technologien
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Herstellerteil #IRG4PC50UDPBF
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Datenblatt IRG4PC50UDPBF DataSheet
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Paket TO-247-3
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Auf Lager5166
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package | Tube |
| ProductStatus | Obsolete |
| Voltage-CollectorEmitterBreakdown(Max) | 600 V |
| Current-Collector(Ic)(Max) | 55 A |
| Current-CollectorPulsed(Icm) | 220 A |
| Vce(on)(Max)@VgeIc | 2V @ 15V, 27A |
| Power-Max | 200 W |
| SwitchingEnergy | 990µJ (on), 590µJ (off) |
| InputType | Standard |
| GateCharge | 180 nC |
| Td(on/off)@25°C | 46ns/140ns |
| TestCondition | 480V, 27A, 5Ohm, 15V |
| ReverseRecoveryTime(trr) | 50 ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | TO-247-3 |
Übersicht
Description
The IRG4PC50UDPBF is an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is designed for high efficiency and fast switching applications, making it suitable for various industrial and electronic applications such as motor drives, inverters, and power supply systems. The device features a nominal collector current of 27A and a collector-emitter voltage rating of 600V, providing robust performance in demanding conditions.
The IRG4PC50UDPBF IGBT combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage drop, which results in reduced power loss and increased efficiency. Additionally, this component is designed with a trench field stop technology, enhancing its switching speed and thermal performance. The "UDPBF" in its name refers to specific packaging and lead-free (Pb-free) material compliance, making it environmentally friendly. In summary, the IRG4PC50UDPBF is a versatile, high-performance IGBT suitable for various power electronics applications requiring efficient switching and high reliability.
The IRG4PC50UDPBF IGBT combines the advantages of both MOSFETs and bipolar transistors, offering high input impedance and low on-state voltage drop, which results in reduced power loss and increased efficiency. Additionally, this component is designed with a trench field stop technology, enhancing its switching speed and thermal performance. The "UDPBF" in its name refers to specific packaging and lead-free (Pb-free) material compliance, making it environmentally friendly. In summary, the IRG4PC50UDPBF is a versatile, high-performance IGBT suitable for various power electronics applications requiring efficient switching and high reliability.
Equivalent
The IRG4PC50UDPBF is an IGBT (Insulated Gate Bipolar Transistor) commonly used in power electronics. Equivalent products include:
1. STMicroelectronics STGW30NC120HD
2. ON Semiconductor FGA40N120
3. Infineon Technologies IKW40N120T2
4. Toshiba GT50JR22
These alternatives are selected based on similar voltage and current ratings, packaging, and intended applications. Always verify specific requirements and characteristics to ensure compatibility.
1. STMicroelectronics STGW30NC120HD
2. ON Semiconductor FGA40N120
3. Infineon Technologies IKW40N120T2
4. Toshiba GT50JR22
These alternatives are selected based on similar voltage and current ratings, packaging, and intended applications. Always verify specific requirements and characteristics to ensure compatibility.
Features
The IRG4PC50UDPBF is a high-power Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. Key features include:
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) rating of 600V and a continuous collector current (I_C) rating of 47A at 100°C.
2. Switching Speed: The device is optimized for fast switching applications, which reduces switching losses and improves overall efficiency.
3. Low Saturation Voltage: It features a low V_CE(sat), which minimizes conduction losses.
4. Rugged Design: The IGBT is designed to withstand high power and voltage, making it suitable for demanding applications.
5. Thermal Efficiency: It has a robust thermal performance, allowing it to operate efficiently at high temperatures.
6. IGBT Technology: Combines the advantages of MOSFETs and bipolar transistors, providing high efficiency and fast switching.
These features make it suitable for applications such as motor drives, inverters, and other high-power electronic circuits.
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) rating of 600V and a continuous collector current (I_C) rating of 47A at 100°C.
2. Switching Speed: The device is optimized for fast switching applications, which reduces switching losses and improves overall efficiency.
3. Low Saturation Voltage: It features a low V_CE(sat), which minimizes conduction losses.
4. Rugged Design: The IGBT is designed to withstand high power and voltage, making it suitable for demanding applications.
5. Thermal Efficiency: It has a robust thermal performance, allowing it to operate efficiently at high temperatures.
6. IGBT Technology: Combines the advantages of MOSFETs and bipolar transistors, providing high efficiency and fast switching.
These features make it suitable for applications such as motor drives, inverters, and other high-power electronic circuits.
Pinout
The IRG4PC50UDPBF is an Insulated Gate Bipolar Transistor (IGBT) device. It typically comes in a TO-247 package, which generally features a three-pin configuration. The pin count and their functions are as follows:
1. Collector (C): This pin is the terminal through which the main current enters the IGBT when it is in the conducting state. It is connected to the higher voltage side of the circuit.
2. Gate (G): This pin is used to control the IGBT. By applying a voltage to the gate, the IGBT is turned on, allowing current to flow from the collector to the emitter.
3. Emitter (E): This pin is the terminal through which the main current exits the IGBT. It is connected to the lower voltage side of the circuit.
These pins ensure the device performs efficiently in switching applications, offering benefits like reduced power loss and high-speed operation.
1. Collector (C): This pin is the terminal through which the main current enters the IGBT when it is in the conducting state. It is connected to the higher voltage side of the circuit.
2. Gate (G): This pin is used to control the IGBT. By applying a voltage to the gate, the IGBT is turned on, allowing current to flow from the collector to the emitter.
3. Emitter (E): This pin is the terminal through which the main current exits the IGBT. It is connected to the lower voltage side of the circuit.
These pins ensure the device performs efficiently in switching applications, offering benefits like reduced power loss and high-speed operation.
Manufacturer
The IRG4PC50UDPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in various types of electronic components, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves a wide range of industries, including automotive, industrial, consumer electronics, and communication sectors. Infineon's products are known for their quality and reliability, and they play a crucial role in enabling energy efficiency, mobility, and security in modern electronic systems.
Application
The IRG4PC50UDPBF is an insulated gate bipolar transistor (IGBT) commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Inverters: Utilized in solar inverters and motor drive inverters for converting DC to AC power.
2. Motor Drives: Employed in industrial motor drives for efficient speed control.
3. Uninterruptible Power Supplies (UPS): Provides reliable power backup systems.
4. Switch-mode Power Supplies: Enhances efficiency in power conversion processes.
5. Welding Equipment: Used for stable power supply in welding operations.
6. HVAC Systems: Improves energy efficiency in heating, ventilation, and air conditioning systems.
These applications benefit from the IGBT's fast switching and high efficiency.
1. Inverters: Utilized in solar inverters and motor drive inverters for converting DC to AC power.
2. Motor Drives: Employed in industrial motor drives for efficient speed control.
3. Uninterruptible Power Supplies (UPS): Provides reliable power backup systems.
4. Switch-mode Power Supplies: Enhances efficiency in power conversion processes.
5. Welding Equipment: Used for stable power supply in welding operations.
6. HVAC Systems: Improves energy efficiency in heating, ventilation, and air conditioning systems.
These applications benefit from the IGBT's fast switching and high efficiency.
Package
The IRG4PC50UDPBF is an insulated-gate bipolar transistor (IGBT) that comes in a TO-247 package type. This package is designed for high-power applications and provides efficient heat dissipation, making it suitable for use in power electronics and switching applications.
