JS28F256M29EWHA

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JS28F256M29EWHA

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IC FLASH 256MBIT PARALLEL 56TSOP

  • HerstellerMicron Technology Inc.

  • Herstellerteil #JS28F256M29EWHA

  • Auf Lager2657

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number JS28F256M29
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 32M x 8, 16M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 110ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Packaging Tray
Access Time 110 ns

Übersicht

Description

The JS28F256M29EWHA is a type of flash memory chip from Intel, part of the StrataFlash series. It boasts a storage capacity of 256 megabits and is designed for high-performance and reliable data storage. This chip utilizes multi-level cell (MLC) technology, allowing it to store more data by fitting multiple bits in a single cell, thus optimizing space and efficiency.
The chip operates efficiently across a range of voltages, making it versatile for various electronic devices. It supports fast read and write speeds, enhancing overall system performance. The JS28F256M29EWHA is suitable for applications in embedded systems, mobile devices, and other electronics requiring reliable non-volatile memory.
Additionally, it features an erase capability that allows data blocks to be reset, facilitating easy updates and data management. The chip's robust design ensures data integrity and durability, even in challenging environments, making it a favored choice for industrial and consumer applications demanding dependable flash memory solutions.

Equivalent

The JS28F256M29EWHA is a 256Mb NOR Flash memory chip. Equivalent products would be other 256Mb NOR Flash memory chips with similar specifications, such as those from manufacturers like Micron, Cypress Semiconductor, or Winbond. Specific equivalents could include the Micron MT28F256P30T, Cypress S29GL256S, or Winbond W29GL256. When selecting equivalents, ensure compatibility in terms of voltage, interface, package, and temperature range. Always verify detailed specs from datasheets to ensure compatibility with your application.

Features

The JS28F256M29EWHA is a NOR Flash memory component designed for embedded systems. It features a storage capacity of 256 megabits (Mb) and is organized in a 2-byte (16-bit) configuration. This memory device is known for its high-speed performance, offering fast read access times which are crucial for applications requiring quick data retrieval. It operates on a single 3.0V supply, making it energy-efficient and suitable for battery-powered devices.
The chip includes advanced security features such as password protection and block locking, ensuring data integrity and safeguarding against unauthorized access. It also supports multiple program and erase cycles, enhancing its longevity and reliability in demanding environments. The JS28F256M29EWHA is designed to operate within a wide temperature range, making it versatile for various industrial and automotive applications.
Additionally, it supports common industry-standard interfaces, facilitating easy integration with existing systems. The device is packaged in a compact form factor, allowing for space-efficient designs in constrained environments.

Pinout

The JS28F256M29EWHA is a NOR Flash memory device from Intel, commonly used for embedded applications due to its non-volatile storage capabilities. It is part of the StrataFlash Embedded Memory family. This specific model typically comes in a 56-pin TSOP (Thin Small Outline Package) or similar form factor.
Key functions of the JS28F256M29EWHA include:
1. Storage: It provides 256 Mb (megabit) of storage, suitable for code and data storage in embedded systems.
2. Non-Volatility: Retains data without power.
3. Read/Write Operations: Supports fast read access times and reliable program/erase cycles.
4. Low Power Consumption: Efficient for battery-powered applications.
5. Parallel NOR Flash Interface: Allows for direct code execution (XIP - eXecute In Place) from the flash, reducing the need for additional RAM.
The pin count and functions are specifically designed to facilitate these operations, and may include address, data, chip enable, output enable, write enable, and other control signals to interface with microcontrollers or processors.

Manufacturer

The JS28F256M29EWHA is a product manufactured by Micron Technology, Inc. Micron is a leading American multinational corporation that specializes in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops a wide range of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor components. The company serves various sectors, including computing, consumer electronics, automotive, mobile telecommunications, and data centers, providing essential technology that powers modern computing and storage systems. Micron is recognized for its innovation in memory and storage technologies, contributing to advancements in data-intensive applications and emerging technologies like artificial intelligence and machine learning.

Application

The JS28F256M29EWHA is a NOR Flash memory device used in a variety of applications, primarily where reliable, non-volatile memory storage is required. Common application areas include:
1. Embedded Systems: Used for firmware storage in devices like industrial machines and consumer electronics.
2. Automotive: Provides robust storage for infotainment systems, navigation, and advanced driver-assistance systems (ADAS).
3. Telecommunications: Utilized in networking equipment for configuration and boot code storage.
4. Medical Devices: Ensures reliable data retention in critical medical equipment with demanding reliability standards.
5. Military and Aerospace: Suitable for high-reliability applications under extreme conditions.
These applications benefit from the memory's fast read speeds, durability, and data retention capabilities.

Package

The JS28F256M29EWHA is a NOR Flash memory chip with a 56-ball Easy BGA (Ball Grid Array) package type. This compact packaging is designed for high-density memory applications, providing efficient mounting and reliable electrical performance in embedded systems.

Frequently Asked Questions


Q: What is the memory density and organization of this NOR Flash?
A: It has a 256Mbit density, organized as 32M x 8-bit or 16M x 16-bit via parallel interface.


Q: What voltage range does this device require for operation?
A: It operates from a single 2.7V to 3.6V supply, making it suitable for low-voltage designs.


Q: What is the typical access time for read operations?
A: The access time is 110 ns, ensuring fast data retrieval for parallel NOR Flash applications.


Q: Can this memory withstand extended temperature environments?
A: Yes, it supports an industrial temperature range from -40°C to +85°C (TA).


Q: Is this component suitable for surface mount assembly?
A: Yes, it is designed for surface mount in a 56-TFSOP package (TSOP Type I, 18.40mm width).


Q: What is the write cycle time for this NOR Flash?
A: The write cycle time is 110ns for word or page programming, ensuring efficient firmware updates.


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