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JS28F512M29EWHA
+StücklisteIC FLASH 512MBIT PARALLEL 56TSOP
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HerstellerMicron Technology Inc.
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Herstellerteil #JS28F512M29EWHA
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Auf Lager5714
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | JS28F512M29 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mbit |
| Memory Organization | 64M x 8, 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 110 ns |
Übersicht
Description
Key features include a high-speed interface, low power consumption, and robust data retention and endurance capabilities, making it suitable for embedded systems, industrial devices, and consumer electronics. The memory operates at a wide range of supply voltages, providing flexibility for different application requirements.
The JS28F512M29EWHA supports asynchronous and synchronous read modes, providing versatility in accessing data. It is designed to be compatible with existing and legacy systems, ensuring ease of integration. The device also includes advanced security features such as block protection and password protection to safeguard data integrity. Overall, the JS28F512M29EWHA is a reliable flash memory solution for applications needing efficient storage with secure and flexible performance.
Equivalent
Features
1. NOR Architecture: Offers fast random read times, making it suitable for code storage and execution (XIP - execute in place).
2. Density: Provides 512 Mb of storage capacity.
3. Interface: Typically supports parallel interface, which can facilitate faster data access compared to serial interfaces.
4. Sector Architecture: Organized in sectors, allowing for easy data management, with each sector capable of individual erase operations.
5. Data Retention: Excellent data retention capabilities, generally over 20 years, ensuring long-term reliability.
6. Endurance: Supports a high number of program/erase cycles, typically up to 100,000 cycles per sector.
7. Low Power Consumption: Features efficient power management for use in battery-powered devices.
8. Wide Temperature Range: Suitable for various environmental conditions, often supporting industrial temperature ranges.
9. Security Features: May include features like block protection to prevent unauthorized data modification.
This flash memory is commonly used in embedded systems, consumer electronics, and other applications requiring reliable and fast non-volatile storage.
Pinout
The key functions of the pins are generally as follows: address inputs for selecting memory locations, data inputs/outputs for data transfer, control signals like Chip Enable (CE), Output Enable (OE), and Write Enable (WE) for managing read/write operations, and power supply pins (Vcc and GND).
Always refer to the specific datasheet for the JS28F512M29EWHA to confirm the exact pin count, configuration, and function, as variations may exist based on packaging and specific manufacturer versions.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the memory size and organization of the JS28F512M29EWHA?
A: It has a 512Mbit (64MB) density, configurable as 64M x 8-bit or 32M x 16-bit via the parallel interface.
Q: Is this component suitable for industrial temperature ranges?
A: Yes, its operating temperature range is -40°C to +85°C (TA), making it suitable for industrial applications.
Q: What is the access time and what voltage does it require?
A: The access time is 110 ns, and it operates with a supply voltage of 2.7V to 3.6V.
Q: What type of memory technology does this FLASH use?
A: It uses FLASH - NOR (Non-Volatile) technology, ideal for reliable code storage and random access.
Q: Can this device support both 8-bit and 16-bit data bus modes?
A: Yes, its memory organization supports both 64M x 8 (byte) and 32M x 16 (word) modes via the parallel interface.
Q: What is the write cycle time for word or page programming?
A: The write cycle time (Word, Page) is 110 ns, ensuring fast programming operations.
Q: What is the package type and mounting style?
A: It is offered in a 56-TFSOP (18.40mm Width) package, designed for Surface Mount mounting, with a 56-TSOP supplier device package.