K4F8E304HB-MGCJ

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K4F8E304HB-MGCJ

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LPDDR4 8Gb x32 3733 Mbps 1.1v 20

  • HerstellerSamsung Semiconductor, Inc.

  • Herstellerteil #K4F8E304HB-MGCJ

  • Auf Lager24740

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Part Status Active
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Memory Size 8Gbit
Memory Organization 256M x 32
Memory Interface Parallel
Clock Frequency 1866 MHz
Voltage - Supply 1.1V
Operating Temperature -25°C ~ 85°C
Mounting Type Surface Mount
Package / Case 200-TFBGA
Packaging Tray

Übersicht

Description

K4F8E304HB-MGCJ appears to be a part number for a specific type of electronic component, likely a memory chip or module, potentially manufactured by a company like Samsung or a similar brand. These components are used in various electronic devices to store data temporarily or permanently. The part number is typically associated with specific technical specifications such as storage capacity, speed, voltage requirements, and physical form factor, which helps in identifying and sourcing the correct component for electronic products.
For accurate details, consulting the manufacturer's datasheet or website is recommended. The datasheet would provide comprehensive technical specifications, usage instructions, and compatibility information necessary for engineers and developers. Understanding these components is crucial for designing and building electronic systems, ensuring they meet the desired performance and reliability standards.

Equivalent

The K4F8E304HB-MGCJ is a specific model of LPDDR4 DRAM chip manufactured by Samsung. Equivalent products would be other LPDDR4 DRAM chips with similar specifications and capacity from manufacturers like Micron, SK Hynix, or Toshiba. When searching for equivalents, ensure they match key specifications such as capacity, speed, voltage, and package type to ensure compatibility. Always refer to the datasheets for detailed comparisons.

Features

The model number K4F8E304HB-MGCJ refers to a specific component of memory, likely a type of DRAM or NAND flash memory module used in electronic devices. While detailed specifications for this exact model might not be widely available, such components typically include features such as:
1. Memory Type: Could be LPDDR (Low Power DDR) or similar, focusing on energy efficiency for mobile and embedded devices.
2. Capacity: Capacities can vary, often expressed in gigabits or gigabytes.
3. Speed: High-speed data transfer rates to support demanding applications.
4. Voltage: Low operating voltage for power efficiency.
5. Form Factor: Compact design suitable for integration into various devices.
6. Temperature Range: Designed to operate within specific temperature ranges for reliability.
7. Reliability: Error-correcting features to ensure data integrity.
For exact specifications, a datasheet or product brief from the manufacturer, typically Samsung, would provide comprehensive details.

Pinout

The K4F8E304HB-MGCJ is a mobile DRAM part manufactured by Samsung, specifically part of their LPDDR3 series. This component is used for memory applications in mobile devices, offering high performance with low power consumption.
The K4F8E304HB-MGCJ is typically configured in a 178-ball Fine-Pitch Ball Grid Array (FBGA) package. This pin count and arrangement optimize its suitability for mobile applications by providing a balance of size and connectivity.
Regarding function, this LPDDR3 memory chip is designed to handle data storage and retrieval tasks efficiently, facilitating fast access times and data transfer rates, which are crucial for mobile computing performance. The DRAM provides temporary storage, enabling devices to run applications, manage operating systems, and handle multitasking operations smoothly.
For detailed specifications, it is advisable to consult the official datasheet from Samsung or the technical documentation provided by the manufacturer.

Manufacturer

The K4F8E304HB-MGCJ is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known primarily for its operations in the electronics and information technology sectors. The company is a leader in the production of a wide range of electronic components, devices, and consumer electronics, including semiconductors, memory chips, smartphones, televisions, and home appliances. Samsung Electronics is a subsidiary of the broader Samsung Group, which operates in various industries such as shipbuilding, construction, and insurance. The company is recognized as one of the largest and most influential technology companies globally, with a strong reputation for innovation and quality in the tech industry.

Application

The K4F8E304HB-MGCJ is a type of memory module commonly used in electronic devices. Its application areas include smartphones, tablets, and other mobile devices, where it provides efficient data storage and retrieval. It is also used in various embedded systems, such as IoT devices and automotive electronics, due to its compact size and reliable performance. Additionally, it can be found in consumer electronics, including digital cameras and portable media players, where quick access to stored data is essential. The module's high-speed and low-power consumption characteristics make it ideal for these applications.

Package

The package type of the Samsung K4F8E304HB-MGCJ is a 153-ball Fine Pitch Ball Grid Array (FBGA). This type of package helps in accommodating the memory chip with a compact design, offering efficient electrical performance and thermal management.

Frequently Asked Questions


Q: What is the memory capacity and organization of the K4F8E304HB-MGCJ?
A: It is an 8Gbit DRAM organized as 256M x 32, suitable for high-bandwidth parallel memory applications.


Q: What is the maximum clock frequency supported by this DRAM?
A: It supports a clock frequency of 1866 MHz, enabling high-speed data transfer for parallel DRAM interfaces.


Q: What supply voltage does this component require?
A: It operates at a 1.1V supply voltage, supporting low-power mobile or embedded memory designs.


Q: What is the operating temperature range of the K4F8E304HB-MGCJ?
A: Its operating temperature range is -25°C to 85°C, suitable for commercial and industrial environment use.


Q: What package type does this DRAM use?
A: It comes in a 200-ball TFBGA (Thin Fine-Pitch Ball Grid Array) surface-mount package for compact PCB layouts.


Q: Is this memory component volatile or non-volatile?
A: It is a volatile DRAM, meaning data is lost when power is removed, requiring periodic refresh.


Q: What is the memory interface of the K4F8E304HB-MGCJ?
A: It features a parallel memory interface, ideal for direct connection to memory controllers in SoCs or CPUs.


Q: How is this component typically packaged for shipment?
A: It is supplied in a tray packaging format, suitable for automated pick-and-place assembly in manufacturing.


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