KLM4G1FETE-B041

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KLM4G1FETE-B041

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4GB eMMC v5.1, -25 ~ 85 C , HS40

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Spezifikationen

Attribut Wert
Part Status Active
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4GByte (NAND)
Memory Organization 32 x 8
Memory Interface eMMC_5.1
Voltage - Supply 1.8V ~ 3.3V
Operating Temperature -25°C ~ 85°C
Mounting Type Surface Mount
Package / Case 153-FBGA
Packaging Tray

Übersicht

Description

The KLM4G1FETE-B041 is a specific model of a 4G LTE module designed for wireless communication. It supports 4G LTE Cat 1 connectivity, offering reliable data transmission for IoT and M2M applications. Key features include:
- Frequency Bands: Supports multiple LTE bands for global compatibility.
- Data Rates: Up to 10 Mbps download / 5 Mbps upload.
- Interfaces: Includes UART, USB, GPIO, and ADC for flexible integration.
- Power Efficiency: Low power consumption for battery-operated devices.
- Operating Temp: Typically -30°C to +75°C, suitable for industrial use.
Common applications include smart meters, asset tracking, telematics, and remote monitoring. The module is often used in IoT devices requiring stable 4G connectivity.
For exact specifications, refer to the datasheet or manufacturer documentation.

Equivalent

The KLM4G1FETE-B041 is a 4Gb NAND flash memory chip from Samsung. Equivalent alternatives include:
- K9F4G08U0D (Samsung)
- MT29F4G08ABADA (Micron)
- TC58NVG2S0HTA00 (Toshiba/Kioxia)
- W29N04GVSIAA (Winbond)
These chips offer similar 4Gb capacity and NAND flash functionality. Verify pin compatibility and specifications for exact replacements.

Features

The KLM4G1FETE-B041 is a 4GB eMMC flash memory module with the following key features:
- Capacity: 4GB (32Gb)
- Interface: eMMC 5.1 (backward compatible)
- Performance: Up to 250MB/s sequential read, 125MB/s sequential write
- Operating Voltage: 3.3V (VCC) & 1.8V/3.3V (VCCQ)
- Temperature Range: Industrial-grade (-40°C to +85°C)
- Reliability: Supports wear leveling, bad block management, and ECC
- Package: 153-ball FBGA (11.5mm x 13mm)
- Endurance: High durability for embedded applications
Ideal for industrial, automotive, and IoT devices requiring stable, high-performance storage.

Pinout

The KLM4G1FETE-B041 is a 153-ball FBGA (Fine Ball Grid Array) package NAND flash memory from Samsung.
Pin Count: 153 balls
Key Functions:
- I/O Pins (x8 or x16): Data input/output for commands, addresses, and data transfer.
- Control Pins (CE#, RE#, WE#, CLE, ALE, WP#): Manage chip enable, read/write operations, and latch control.
- Power Pins (VCC, VCCQ): Supply voltage (3.3V for VCC, 1.8V/3.3V for VCCQ).
- Ground Pins (VSS): Provide grounding.
- R/B#: Ready/Busy status indicator.
It supports high-speed NAND flash operations with SLC/MLC/TLC technology.

Manufacturer

The KLM4G1FETE-B041 is a NAND flash memory component manufactured by SK Hynix, a South Korean semiconductor company.
SK Hynix is a major global producer of memory chips, specializing in DRAM, NAND flash, and SSD solutions. It is one of the largest memory suppliers worldwide, competing with companies like Samsung and Micron. The company serves industries such as consumer electronics, data centers, and automotive.
For detailed specifications, refer to SK Hynix's official datasheets or product documentation.

Application

The KLM4G1FETE-B041 is a high-performance RF inductor designed for compact, high-frequency applications. Key areas include:
1. Mobile Devices – Used in smartphones and tablets for RF signal filtering and power amplification.
2. 5G/Wi-Fi Modules – Supports high-frequency circuits in 5G base stations and Wi-Fi 6/6E devices.
3. IoT/Wearables – Enhances efficiency in small, low-power IoT and wearable electronics.
4. Automotive Electronics – Applied in infotainment, ADAS, and V2X communication systems.
5. RFID/NFC – Optimizes near-field communication and RFID tag performance.
Its small size, high Q-factor, and stable inductance make it ideal for high-frequency, miniaturized designs.

Frequently Asked Questions


Q: What is the memory capacity of the KLM4G1FETE-B041?
A: It is a 4 GByte (32 Gbit) NAND Flash device, organized as 32 x 8-bit.


Q: What memory interface standard does this component support?
A: It supports the eMMC 5.1 interface, enabling high-speed data transfers and integrated memory management.


Q: What are the voltage requirements for this eMMC chip?
A: It operates over a wide supply voltage range of 1.8V to 3.3V, offering flexible power design options.


Q: Is this NAND Flash device suitable for industrial temperature ranges?
A: Yes, its operating temperature is -25°C to 85°C, making it suitable for extended temperature applications.


Q: What is the package type for the KLM4G1FETE-B041?
A: It is housed in a 153-ball FBGA package, designed for surface mount assembly.


Q: Is the memory type volatile or non-volatile?
A: It is non-volatile FLASH memory, ensuring data retention even when power is removed.


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