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M29W400DB55N6E
+StücklisteIC FLASH 4MBIT PARALLEL 48TSOP I
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HerstellerMicron Technology Inc.
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Herstellerteil #M29W400DB55N6E
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Auf Lager8721
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | M29W400 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8, 256K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
| Access Time | 55 ns |
Übersicht
Description
Key points
- Capacity: ~4 Mbit (512 KB x 8)
- Interface: parallel NOR flash (x8 data bus)
- Speed/Timing: 55 ns class read access (as suggested by the 55 in the part number)
- Voltage: typical 2.7–3.6 V operation
- Operations: read, program, erase (sector/block granularity), typical for boot/code-storage use
- Packaging: standard small-outline/through-hole options common to NOR flash (e.g., SOP/TSOP)
- Applications: embedded systems firmware storage, boot ROM, code execution in place (XIP)
Note: exact electrical specs, timing diagrams, and package options vary by revision. For precise details, consult the Macronix datasheet for M29W400DB55N6E.
Equivalent
- Spansion S29GL040
- Macronix MX29F400
- Winbond W29GL040
Note: exact cross‑reference depends on package, voltage, and timing; verify device IDs, banks, and erase/write characteristics.
Features
- Density: 4 Mbit NOR flash memory
- Interface: parallel NOR with x8 data bus (x16 option)
- Speed: 55 ns random access time
- Supply: single 2.7–3.6 V operation
- Memory operations: random read, byte/word access
- Programming: 256-byte page programming
- Erase: sector/block erase (block up to 64 KB; finer sectors available in some variants)
- Endurance: ~100,000 erase/program cycles
- Data retention: ~20 years
- Protection: hardware block protection/locking and status register for Busy/Ready
- Power management: low-power standby and deep power-down modes
- Temperature: -40°C to +85°C (industrial)
Note: Exact sector sizes and packaging options may vary by device variant; consult the datasheet for specific details.
Pinout
Function: M29W400DB55N6E is a 4-Mbit NOR Flash memory with an 8-bit data bus (x8). It provides random-access read and program/erase operations (sector/block erase), for nonvolatile storage of code/data. Typical operation voltage is in the low-voltage range (variant dependent, commonly 2.7–3.6 V).
Manufacturer
- What kind of company: A Taiwanese semiconductor company that designs and manufactures non-volatile memory ICs (NOR/NAND Flash) and other memory products; an integrated device manufacturer (IDM) with in-house fabrication.
Application
- Embedded systems: firmware storage, boot code, and execute-in-place for MCUs/SoCs
- Automotive/industrial: ECUs, instrument clusters, motor controllers, PLCs needing reliable non-volatile memory
- Consumer electronics: digital cameras, set-top boxes, DVD players, printers for firmware storage
- Networking/telecom: routers, switches for firmware and configuration data
- Any system requiring fast random-access NOR flash for code and parameter storage, with in-system programming and updates
Package
Frequently Asked Questions
Q: Is this NOR Flash device a 3V or 5V part?
A: It operates from a 2.7V to 3.6V supply, making it a standard 3V NOR Flash device.
Q: What is the maximum random access time for reads?
A: The access time is 55ns, which is the fastest read cycle for this device.
Q: Can I use this chip in both 8-bit and 16-bit systems?
A: Yes, it supports byte mode (512K x 8) and word mode (256K x 16) via a byte/word select pin.
Q: What package and mounting type does this part use?
A: It comes in a 48-TFSOP (18.40mm width) surface mount package, also known as 48-TSOP I.
Q: Is this device suitable for automotive or extreme temperature environments?
A: Yes, the operating temperature range is -40°C to 85°C (industrial temperature grade).
Q: What is the write cycle time for programming this Flash?
A: The write cycle time per word or page is 55ns (typically specified for the programming operation).
Q: Does this part have a known end-of-life status?
A: The part status is marked as "Obsolete" by the manufacturer, so it is not recommended for new designs.
Q: Is the memory interface parallel or serial?
A: The memory interface is parallel (standard address/data bus), not serial SPI.
