MMUN2233LT1G

Abbildungen dienen nur als Referenz

MMUN2233LT1G

+Stückliste

TRANS PREBIAS NPN 50V SOT23-3

  • HerstellerOnsemi

  • Herstellerteil #MMUN2233LT1G

  • Paket SOT-23-3

  • Auf Lager3353

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector(Ic)(Max) 100 mA
Voltage - Collector Emitter Breakdown(Max) 50 V
Resistor - Base(R1) 4.7 kOhms
Resistor - Emitter Base(R2) 47 kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff(Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount

Übersicht

Description

The MMUN2233LT1G is a dual N-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- 30V drain-source voltage (VDS)
- 4.5V gate drive (VGS), compatible with 5V logic
- Low on-resistance (RDS(on)) for reduced power loss
- Compact SOT-23-6L package, ideal for space-constrained designs
Common uses include power management in portable devices, load switching, and DC-DC converters. Its low threshold voltage and fast switching make it suitable for battery-powered applications.
For detailed specs, refer to the datasheet or ON Semiconductor’s official documentation.

Features

The MMUN2233LT1G is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 30V (VDSS)
- Current Rating: 6.3A (ID)
- Low On-Resistance: 41mΩ (RDS(on)) at VGS = 10V
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Compact Package: SOT-23-6L (Space-saving surface-mount design)
- Logic-Level Gate Drive: Compatible with 4.5V drive (VGS(th) ~1V)
- Applications: Power management, load switching, DC-DC converters, and motor control.
This MOSFET is ideal for low-voltage, high-efficiency designs requiring minimal power loss.

Manufacturer

The MMUN2233LT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient innovations. The MMUN2233LT1G is a dual NPN/PNP digital transistor, commonly used for signal switching and amplification in compact circuits.
onsemi is known for reliable, high-performance components and has a strong presence in automotive and industrial markets.

Application

The MMUN2233LT1G is a dual NPN transistor in a small SOT-23 package, commonly used in:
1. Switching Circuits – Load switching, signal routing.
2. Amplification – Small-signal amplification in audio/RF stages.
3. Digital Logic – Interface level shifting, inverter circuits.
4. Consumer Electronics – TVs, smartphones, IoT devices.
5. Automotive Systems – Sensor interfaces, control modules.
Its low voltage (50V max) and moderate current (600mA) make it suitable for compact, low-power applications.

Package

The MMUN2233LT1G is a dual NPN bias resistor transistor (BRT) in a SOT-23-3 (TO-236AB) surface-mount package. It integrates bias resistors, simplifying circuit design. The compact SOT-23-3 package is suitable for space-constrained applications.

Produkte, die mit MMUN2233LT1G zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für MMUN2233LT1G Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.