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MUN2211T1G
+StücklisteTRANS PREBIAS NPN 50V 100MA SC59
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HerstellerOnsemi
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Herstellerteil #MUN2211T1G
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Paket SC-59
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Auf Lager5798
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 10 kOhms |
| Resistor - Emitter Base(R2) | 10 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 35 @ 5mA, 10V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Power - Max | 230 mW |
| Mounting Type | Surface Mount |
Übersicht
Description
If this is indeed a music course, it might cover an introduction to a particular aspect of music, such as theory, performance, or musicology. The "T1G" could indicate a particular session, semester, or level, but it varies by institution.
For detailed information, you should consult the course catalog or syllabus provided by the institution offering the course. This will give you specifics on course objectives, structure, required materials, and evaluation methods. If you are a student or prospective student, contacting the course instructor or academic advisor might also provide clarity.
Equivalent
1. ROHM's DTC series (e.g., DTC143 series)
2. Nexperia's BC817 series with integrated resistors
3. Diodes Incorporated's DXT series with built-in resistors
When selecting an equivalent, consider the specific resistances, voltage, current ratings, and packaging to ensure compatibility with your application. Always refer to datasheets for precise matching.
Features
1. Transistor Type: NPN, which means it consists of two n-type semiconductors separated by a p-type semiconductor.
2. Package Type: SOT-23, a small outline transistor package that is compact and suitable for surface-mount technology, making it ideal for space-constrained applications.
3. Collector-Emitter Voltage (Vceo): Typically around 50V, indicating the maximum voltage the transistor can handle between the collector and emitter in the off state.
4. Collector Current (Ic): Usually around 100mA, representing the maximum continuous current the transistor can conduct.
5. Power Dissipation (Ptot): Generally about 150mW, indicating the maximum power the device can dissipate.
6. Current Gain (hFE): Provides a typical range, ensuring amplification capability.
7. Applications: Suitable for low-power switching and amplification tasks in various electronic circuits.
These features make the MUN2211T1G versatile for use in consumer electronics, signal processing, and other applications requiring reliable transistor performance.
Pinout
1. Pin 1 (Base) - Connects to the control voltage, which is used to turn the transistor on or off.
2. Pin 2 (Emitter) - Outputs to ground in the circuit and is the common connection in the transistor.
3. Pin 3 (Collector) - Connects to the load and is the output of the transistor.
The MUN2211T1G features a built-in biasing resistor, which simplifies circuit design by reducing the number of external components needed. This setup makes it especially useful for applications involving digital circuits where a simple on/off switch is required.